Micron technology, inc. (20240303187). PARTIALLY PROGRAMMED BLOCK READ OPERATIONS simplified abstract
Contents
PARTIALLY PROGRAMMED BLOCK READ OPERATIONS
Organization Name
Inventor(s)
Pitamber Shukla of Boise ID (US)
Scott A. Stoller of Boise ID (US)
Tyler Betz of Meridian ID (US)
PARTIALLY PROGRAMMED BLOCK READ OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240303187 titled 'PARTIALLY PROGRAMMED BLOCK READ OPERATIONS
The abstract describes apparatuses and methods for performing read operations on a partially programmed block in a memory array.
- Controller applies read voltage to a word line during a read operation.
- Controller applies a first pass voltage to programmed word lines and a second pass voltage to unprogrammed word lines during the read operation.
Potential Applications: - Memory devices - Data storage systems - Semiconductor industry
Problems Solved: - Efficient read operations on partially programmed blocks - Improved memory cell performance
Benefits: - Enhanced memory access speed - Increased data retrieval efficiency
Commercial Applications: Title: "Advanced Memory Read Operation Technology" This technology can be used in various memory devices, data storage systems, and semiconductor applications to improve read operation efficiency and overall performance.
Questions about Advanced Memory Read Operation Technology: 1. How does this technology improve memory access speed? - This technology enhances memory access speed by efficiently reading partially programmed blocks in memory arrays. 2. What are the potential commercial applications of this technology? - This technology can be applied in memory devices, data storage systems, and semiconductor industry for improved read operation efficiency.
Original Abstract Submitted
apparatuses and methods for determining performing read operations on a partially programmed block are provided. one example apparatus can include a controller configured to apply a read voltage to a word line in an array of memory cells during a read operation on the word line, apply a first pass voltage to a number of programmed word lines in the array of memory cells during the read operation, and apply a second pass voltage to a number of unprogrammed word lines in the array of memory cells during the read operation.
