Micron technology, inc. (20240292766). CHALCOGENIDE MEMORY DEVICE COMPOSITIONS simplified abstract
Contents
CHALCOGENIDE MEMORY DEVICE COMPOSITIONS
Organization Name
Inventor(s)
Dale W. Collins of Boise ID (US)
Paolo Fantini of Vimercate (MB) (IT)
Lorenzo Fratin of Buccinasco (MI) (IT)
Enrico Varesi of Milano (MI) (IT)
CHALCOGENIDE MEMORY DEVICE COMPOSITIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240292766 titled 'CHALCOGENIDE MEMORY DEVICE COMPOSITIONS
The abstract describes methods, systems, and devices for chalcogenide memory device compositions, where a memory cell can utilize a chalcogenide material with specific compositions as storage materials, selector materials, or self-selecting storage materials. The chalcogenide material may contain a sulfurous component, which could be sulfur alone or a combination of sulfur and other elements like selenium. Additionally, the chalcogenide material may include other elements such as germanium, at least one group-III element, or arsenic.
- Chalcogenide memory device compositions are described in the patent application.
- The chalcogenide material can be used as storage materials, selector materials, or self-selecting storage materials in memory cells.
- The chalcogenide material may contain a sulfurous component, which could be sulfur alone or in combination with other elements like selenium.
- Other elements such as germanium, at least one group-III element, or arsenic may also be present in the chalcogenide material.
Potential Applications: - Memory devices - Data storage systems - Electronic devices
Problems Solved: - Enhanced performance and reliability of memory devices - Improved data storage capabilities
Benefits: - Increased efficiency in data storage - Enhanced durability of memory devices
Commercial Applications: Title: Chalcogenide Memory Device Compositions: Commercial Uses and Market Implications This technology could be utilized in the development of advanced memory devices for various electronic applications, potentially impacting the data storage market significantly.
Questions about Chalcogenide Memory Device Compositions: 1. How do chalcogenide memory device compositions differ from traditional memory devices? Chalcogenide memory device compositions offer improved performance and reliability compared to traditional memory devices due to their unique material compositions and properties.
2. What are the potential implications of using chalcogenide materials in memory devices? The use of chalcogenide materials in memory devices can lead to increased data storage efficiency and enhanced device durability, benefiting various electronic applications.
Original Abstract Submitted
methods, systems, and devices for chalcogenide memory device compositions are described. a memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. a chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (s) or may be a combination of sulfur and one or more other elements, such as selenium (se). in addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (ge), at least one group-iii element, or arsenic (as).
