Micron technology, inc. (20240292623). METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS simplified abstract

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METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS

Organization Name

micron technology, inc.

Inventor(s)

Shuangqiang Luo of Boise ID (US)

Indra V. Chary of Boise ID (US)

Justin B. Dorhout of Boise ID (US)

METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240292623 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS

The abstract of the patent application describes a microelectronic device with a stack structure consisting of insulative and conductive structures, divided into block portions, with slit structures interposed horizontally between the block portions. Each slit structure includes a dielectric liner covering the side surfaces of the stack structure and an upper surface of an additional structure, along with a plug structure containing at least one metal surrounded by the dielectric liner.

  • The microelectronic device features a stack structure composed of insulative and conductive structures arranged in a vertically alternating sequence.
  • The stack structure is divided into block portions for organization and efficiency.
  • Slit structures are inserted horizontally between the block portions to enhance performance.
  • Each slit structure includes a dielectric liner covering the side surfaces of the stack structure and an upper surface of an additional underlying structure.
  • A plug structure within the slit contains at least one metal surrounded by the dielectric liner.

Potential Applications: - This technology could be applied in the development of advanced microelectronic devices for various industries such as telecommunications, computing, and consumer electronics.

Problems Solved: - The innovation addresses the need for improved performance and efficiency in microelectronic devices by optimizing the stack structure with slit and plug structures.

Benefits: - Enhanced functionality and reliability of microelectronic devices. - Increased efficiency and performance in data processing and communication.

Commercial Applications: - The technology could be utilized in the production of high-performance microchips for smartphones, computers, and other electronic devices, potentially leading to advancements in the semiconductor industry.

Questions about the technology: 1. How does the dielectric liner contribute to the performance of the microelectronic device? 2. What are the potential challenges in implementing this technology in mass production?


Original Abstract Submitted

a microelectronic device may include a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures, the stack structure divided into block portions. the microelectronic device may additionally include slit structures horizontally interposed between the block portions of the stack structure. each of the slit structures may include a dielectric liner covering side surfaces of the stack structure and an upper surface of an additional structure underlying the stack structure, and a plug structure comprising at least one metal surrounded by the dielectric liner.