Micron technology, inc. (20240292607). SELF-ALIGNED LINE CONTACTS simplified abstract
Contents
SELF-ALIGNED LINE CONTACTS
Organization Name
Inventor(s)
Jun Ho Lee of Higashihiroshima City (JP)
Byung Yoon Kim of Boise ID (US)
Sangmin Hwang of San Jose CA (US)
SELF-ALIGNED LINE CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240292607 titled 'SELF-ALIGNED LINE CONTACTS
Simplified Explanation: The patent application describes an apparatus with line contacts for conductive signal lines, ensuring a margin for shorts between signal lines even with misalignment. It also details a two-stage removal process for forming a memory device.
Key Features and Innovation:
- Apparatus with line contacts for conductive signal lines
- Margin for shorts between signal lines maintained even with misalignment
- Two-stage removal process for forming a memory device
Potential Applications: This technology can be applied in memory devices, semiconductor manufacturing, and integrated circuits where precise alignment of signal lines is crucial.
Problems Solved: The technology addresses the challenge of maintaining a margin for shorts between closely-spaced signal lines, even in cases of misalignment during manufacturing processes.
Benefits:
- Improved reliability in memory devices
- Enhanced manufacturing efficiency
- Reduced risk of short circuits in integrated circuits
Commercial Applications: The technology could be utilized in the production of memory devices, semiconductor components, and other electronic devices requiring precise alignment of signal lines.
Prior Art: Readers can explore prior art related to line contact formation in memory devices, semiconductor manufacturing, and integrated circuits to understand the evolution of this technology.
Frequently Updated Research: Stay updated on advancements in semiconductor manufacturing techniques, memory device technology, and integrated circuit design to enhance the application of this innovation.
Questions about Line Contact Formation: 1. How does the two-stage removal process improve the formation of memory devices? 2. What are the potential challenges in maintaining a margin for shorts between signal lines in semiconductor manufacturing?
Original Abstract Submitted
a variety of applications can include an apparatus having a device including line contacts to closely-spaced conductive signal lines structured such that a sufficient margin for shorts between a signal line and a line contact to a directly adjacent signal line is maintained even with a misalignment of the line contact. in an embodiment, formation of a memory device can include forming a line contact on and contacting an access line for an array of memory cells, using a two stage removal procedure of different removal processes. the two stage removal procedure can include removing a portion of processing layers above an insulating protective layer positioned on the access line and selectively removing the insulating protective layer, exposing a portion of the access line, without removing material of the access line. the line contact can be formed on and contacting the top exposed portion of the access line.
