Micron technology, inc. (20240292603). DAMASCENE DIGIT LINES simplified abstract
Contents
DAMASCENE DIGIT LINES
Organization Name
Inventor(s)
Russell A. Benson of Boise ID (US)
Terrence B. Mcdaniel of Boise ID (US)
DAMASCENE DIGIT LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240292603 titled 'DAMASCENE DIGIT LINES
The patent application describes a method for creating damascene digit lines on a semiconductor substrate. This involves the formation of dummy digit lines separated by vertical trenches, deposition of insulating materials, creation of cell contact deposition spaces, and the formation of digit lines.
- Formation of dummy digit lines on a semiconductor substrate
- Deposition of sacrificial insulating material in vertical trenches
- Creation of cell contact deposition spaces by removing a portion of the substrate
- Formation of vertical openings by removing dummy digit lines
- Deposition of digit line insulating material in expanded vertical openings
- Formation of digit lines
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Efficient creation of damascene digit lines - Improved semiconductor substrate processing
Benefits: - Enhanced manufacturing processes - Higher quality integrated circuits - Increased efficiency in electronics production
Commercial Applications: Title: "Advanced Semiconductor Manufacturing Method for Damascene Digit Lines" This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and tablets. It can also benefit companies involved in semiconductor manufacturing and integrated circuit production.
Questions about Damascene Digit Lines: 1. How does the formation of dummy digit lines contribute to the overall process?
- Dummy digit lines help in creating a template for the subsequent steps in forming the digit lines.
2. What is the significance of depositing insulating materials in the vertical trenches?
- Insulating materials help in isolating the digit lines and preventing interference between them.
Original Abstract Submitted
systems, methods and apparatus are provided for damascene digit lines. for instance, a damascene digit line can be formed by forming a plurality of dummy digit lines on a semiconductor substrate that are separated by a first set of vertical trenches, depositing a sacrificial insulating material in the first set of vertical trenches, forming, and depositing an insulating fill material in, a second set of vertical trenches, forming, and depositing a nitride material in, nitride material deposition spaces; removing at least a portion of the semiconductor substrate to form plurality of cell contact deposition spaces, forming cell contacts in the cell contact deposition spaces, removing the dummy digit lines to form a plurality of vertical openings, removing nitride material to form expanded vertical opening, depositing a digit line insulating material in the expanded vertical openings to form digit line deposition spaces, and forming digit lines.
