Micron technology, inc. (20240290404). GATE VOLTAGE STEP AND PROGRAM VERIFY LEVEL ADJUSTMENT IN A MEMORY DEVICE simplified abstract
Contents
GATE VOLTAGE STEP AND PROGRAM VERIFY LEVEL ADJUSTMENT IN A MEMORY DEVICE
Organization Name
Inventor(s)
Christina Papagianni of San Jose CA (US)
Murong Lang of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
GATE VOLTAGE STEP AND PROGRAM VERIFY LEVEL ADJUSTMENT IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240290404 titled 'GATE VOLTAGE STEP AND PROGRAM VERIFY LEVEL ADJUSTMENT IN A MEMORY DEVICE
Abstract: A request to perform a program operation on a memory cell of a memory device is received. A number of program erase cycles (PECs) associated with the memory device is determined. A temperature of the memory device is determined. A gate voltage step adjustment value and a program verify level adjustment value is determined based on the temperature and the number of PECs. A default gate voltage step is adjusted based the gate voltage step adjustment value. A default program verify level is adjusted based the program verify level adjustment value.
- Simplified Explanation:
The patent application involves adjusting gate voltage and program verify levels of a memory device based on temperature and the number of program erase cycles associated with the device.
- Key Features and Innovation:
- Determining gate voltage step adjustment value and program verify level adjustment value based on temperature and PECs - Adjusting default gate voltage step and program verify level accordingly
- Potential Applications:
- Memory devices in electronic devices - Data storage systems - Semiconductor manufacturing
- Problems Solved:
- Optimizing memory cell performance - Enhancing reliability of memory devices
- Benefits:
- Improved memory device efficiency - Extended lifespan of memory cells
- Commercial Applications:
- Memory chip manufacturers - Electronics companies - Data storage providers
- Prior Art:
Prior art related to this technology may include research on memory cell optimization and semiconductor device performance.
- Frequently Updated Research:
Ongoing research in semiconductor manufacturing techniques and memory device optimization may be relevant to this technology.
Questions about Memory Device Optimization: 1. How does adjusting gate voltage and program verify levels impact memory device performance? Adjusting these levels can optimize memory cell operation and enhance overall device reliability.
2. What are the potential implications of this technology for memory chip manufacturers? This technology could lead to more efficient memory devices and potentially lower manufacturing costs.
Original Abstract Submitted
a request to perform a program operation on a memory cell of a memory device is received. a number of program erase cycles (pecs) associated with the memory device is determined. a temperature of the memory device is determined. a gate voltage step adjustment value and a program verify level adjustment value is determined based on the temperature and the number of pecs. a default gate voltage step is adjusted based the gate voltage step adjustment value. a default program verify level is adjusted based the program verify level adjustment value.
