Micron technology, inc. (20240284675). MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS simplified abstract
MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS
Organization Name
Inventor(s)
Albert Fayrushin of Boise ID (US)
Chris M. Carlson of Nampa ID (US)
MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240284675 titled 'MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICAL EXTENSION BETWEEN UPPER AND LOWER CHANNEL REGIONS, AND RELATED METHODS
Simplified Explanation: The patent application describes a microelectronic device with a unique stack structure and pillar design, allowing for efficient integration of source and channel materials.
- The device features a stack structure with insulative and conductive layers arranged in tiers.
- A pillar, made of channel material, extends through the stack structure.
- The source region below the stack structure contains doped material, with a vertical extension reaching the channel material within the stack.
- The method of forming the device involves creating a lateral opening in the pillar, recessing the channel material, and depositing the doped material in the recess.
Key Features and Innovation:
- Vertically alternating insulative and conductive layers in the stack structure.
- Pillar design with channel material for efficient material integration.
- Doped source region extending vertically to interface with the channel material.
- Method involving lateral opening creation, channel material recessing, and doped material deposition.
Potential Applications:
- Semiconductor manufacturing
- Microelectronics industry
- Integrated circuit design
Problems Solved:
- Efficient material integration in microelectronic devices
- Enhanced conductivity and performance
- Simplified fabrication process
Benefits:
- Improved device efficiency
- Enhanced performance capabilities
- Streamlined manufacturing process
Commercial Applications: Potential commercial applications include:
- Semiconductor fabrication
- Electronics manufacturing
- Advanced technology development
Prior Art: Readers can explore prior art related to this technology in the field of microelectronic device design and semiconductor manufacturing processes.
Frequently Updated Research: Stay informed about the latest advancements in microelectronic device design and semiconductor technology for potential updates related to this innovation.
Questions about Microelectronic Device with Stack Structure and Pillar Design: 1. How does the unique stack structure of this microelectronic device contribute to its performance? 2. What are the advantages of using a pillar design with channel material in this device?
Original Abstract Submitted
a microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. at least one pillar, comprising a channel material, extends through the stack structure. a source region, below the stack structure, comprises a doped material. a vertical extension of the doped material protrudes upward to an interface with the channel material at elevation within the stack structure (e.g., an elevation proximate or laterally overlapping in elevation at least one source-side gidl region). the microelectronic device structure may be formed by a method that includes forming a lateral opening through cell materials of the pillar, recessing the channel material to form a vertical recess, and forming the doped material in the vertical recess. additional microelectronic devices are also disclosed, as are related methods and electronic systems.
