Micron technology, inc. (20240284672). MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE simplified abstract
Contents
MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE
Organization Name
Inventor(s)
David H. Wells of Boise ID (US)
Matthew J. King of Boise ID (US)
Indra V. Chary of Boise ID (US)
Yoshiaki Fukuzumi of Yokohama (JP)
Paolo Tessariol of Arcore (MB) (IT)
Shuangqiang Luo of Boise ID (US)
MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240284672 titled 'MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE
The patent application describes methods, systems, and devices for forming merged cavities for conductors in a memory die. Cavities are formed through material layers, and conductors are created by merging some of these cavities. The size of the cavities is determined by the smallest feature in the subset, with conductors formed by merging multiple cavities using material removal operations.
- Cavities are formed in a memory die by merging some of them to create conductors.
- The size of the cavities is based on the smallest feature in a subset.
- Conductors are formed by merging multiple cavities using material removal operations.
- This method allows for the creation of conductors with larger cross-sections compared to other features formed using cavities that are not merged.
Potential Applications: - Memory die manufacturing - Semiconductor industry - Electronics manufacturing
Problems Solved: - Efficient formation of conductors in a memory die - Enhanced performance of electronic devices - Precision in conductor formation
Benefits: - Improved conductivity in memory dies - Higher efficiency in manufacturing processes - Enhanced functionality of electronic devices
Commercial Applications: Title: Advanced Memory Die Conductor Formation Technology This technology can be applied in the semiconductor industry to improve the manufacturing process of memory dies, leading to more efficient and high-performance electronic devices. The market implications include increased demand for advanced memory die manufacturing solutions.
Prior Art: Readers can explore prior patents related to memory die manufacturing, conductor formation, and semiconductor technologies to understand the evolution of this innovation.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the efficiency and performance of memory die conductor formation processes.
Questions about Memory Die Conductor Formation Technology: 1. How does the merging of cavities improve the formation of conductors in a memory die? - The merging of cavities allows for the creation of conductors with larger cross-sections, enhancing conductivity and performance. 2. What are the potential challenges faced in implementing this technology in large-scale manufacturing processes? - Some challenges may include ensuring precise merging of cavities and optimizing material removal operations for efficient conductor formation.
Original Abstract Submitted
methods, systems, and devices for merged cavities for conductor formation in a memory die are described. an array of cavities may be formed through a stack of material layers of a memory die, and conductors may be formed at least in part by merging some of the cavities of the array. such cavities may be sized in accordance with a relatively smallest feature that implements a subset of such cavities, and a smallest associated feature may be formed using a first subset of the array of cavities. conductors may be formed at least in part by merging two or more cavities of a second subset of the array of cavities using a material removal operation to remove portions of the stack of material layers. such merging may support conductors being formed with a cross-section that is greater than a cross-section of other features formed using such cavities that are not merged.
