Micron technology, inc. (20240284663). ASYMMETRIC TRANSISTOR DEVICES simplified abstract
Contents
ASYMMETRIC TRANSISTOR DEVICES
Organization Name
Inventor(s)
Srinivas Pulugurtha of Boise ID (US)
Dan Mihai Mocuta of Boise ID (US)
ASYMMETRIC TRANSISTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240284663 titled 'ASYMMETRIC TRANSISTOR DEVICES
- Simplified Explanation:**
The patent application describes an apparatus with asymmetric transistor devices, where pairs of transistors share a common source region. Tilted implantation is used to extend the drain junction depth without additional masking.
- Key Features and Innovation:**
- Apparatus with asymmetric transistor devices - Pairs of transistors sharing a common source region - Tilted implantation to extend drain junction depth - No additional masks needed for doping
- Potential Applications:**
- Semiconductor manufacturing - Integrated circuits - Electronics industry
- Problems Solved:**
- Enhancing transistor performance - Simplifying manufacturing processes - Improving efficiency in electronic devices
- Benefits:**
- Increased functionality of transistors - Cost-effective manufacturing - Enhanced performance of electronic devices
- Commercial Applications:**
- Semiconductor companies - Electronics manufacturers - Research institutions
- Prior Art:**
Prior art related to this technology can be found in semiconductor device manufacturing processes, asymmetric transistor designs, and tilted implantation techniques.
- Frequently Updated Research:**
Ongoing research in semiconductor manufacturing techniques, transistor design optimization, and advanced doping methods may be relevant to this technology.
- Questions about asymmetric transistor devices:**
1. What are the main advantages of using asymmetric transistor devices in electronic applications? 2. How does tilted implantation contribute to extending the drain junction depth in asymmetric transistors?
Original Abstract Submitted
a variety of applications can include an apparatus having one or more pairs of transistors sharing a common source region that provide asymmetric transistor devices. the drains of the transistors of a pair sharing a common source region can be structured with the source junction depth being shallower than the drain junction depth of the drain region of at least one of the transistors of the pair. tilted implantation can be used to extend a drain junction depth beyond the distance of the source junction depth by implanting additional dopants. the extension of the drain junction depth can be accomplished without additional masks being used in processing to dope only a drain region and skip doping on a corresponding source region.
