Micron technology, inc. (20240282731). HYBRID BONDING FOR SEMICONDUCTOR DEVICE ASSEMBLIES simplified abstract
Contents
HYBRID BONDING FOR SEMICONDUCTOR DEVICE ASSEMBLIES
Organization Name
Inventor(s)
Bharat Bhushan of Taichung (TW)
Chaiyanan Kulchaisit of Hiroshima (JP)
Kyle K. Kirby of Eagle ID (US)
Akshay N. Singh of Boise ID (US)
HYBRID BONDING FOR SEMICONDUCTOR DEVICE ASSEMBLIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282731 titled 'HYBRID BONDING FOR SEMICONDUCTOR DEVICE ASSEMBLIES
The semiconductor device assembly described in the patent application consists of a semiconductor die with bond pads and a dielectric layer, and an interface die with bond pads, dielectric layers, a mechanically altered surface, and a redistribution layer.
- The semiconductor die has a frontside surface with a first plurality of bond pads and a first dielectric layer.
- The interface die has a frontside surface, a backside surface, a second plurality of bond pads, a second dielectric layer on the backside surface, a third dielectric layer on the frontside surface with a mechanically altered surface, and a redistribution layer above the frontside surface.
- Hybrid bonds are placed between the frontside surface of the semiconductor die and the backside surface of the interface die.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and reliability of integrated circuits.
Problems Solved: - Enhances the bonding process between semiconductor dies and interface dies. - Provides a more efficient and reliable way to assemble semiconductor devices.
Benefits: - Improved bond strength and electrical connectivity. - Enhanced overall performance and durability of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Assembly Technology This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and automotive electronics. It can also benefit the semiconductor industry by enabling the development of more advanced and reliable integrated circuits.
Questions about the technology: 1. How does the mechanically altered surface of the third dielectric layer contribute to the performance of the semiconductor device assembly? 2. What are the advantages of using hybrid bonds in this semiconductor device assembly?
Original Abstract Submitted
a semiconductor device assembly, including a semiconductor die having a frontside surface, a first plurality of bond pads at the frontside surface and a first dielectric layer at the frontside surface; and an interface die having a frontside surface and a backside surface, the interface die including a second plurality of bond pads and a second dielectric layer disposed on the backside surface of the interface die, a third dielectric layer disposed on the frontside surface of the interface die, wherein the third dielectric layer includes a mechanically altered surface opposite the frontside surface of the interface die, and a redistribution layer disposed on the third dielectric layer and above the frontside surface of the interface die, wherein hybrid bonds are disposed between the frontside surface of the semiconductor die and the backside surface of the interface die.
