Micron technology, inc. (20240282620). SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract
Contents
SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
Kunal R. Parekh of Boise ID (US)
SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282620 titled 'SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT
The abstract describes semiconductor devices with a metal interconnect that extends vertically through a portion of the device to the back side of a semiconductor substrate. The top region of the metal interconnect is located below a metal routing layer.
- Metal interconnect extends vertically through the device to the back side of the semiconductor substrate.
- Top region of the metal interconnect is located below a metal routing layer.
- Method of fabricating the device includes etching a via into the substrate, filling it with metal, forming a metal routing layer, and removing a portion of the substrate to expose the bottom region of the metal-filled via.
Potential Applications: - Advanced semiconductor devices - Integrated circuits - Microelectronics
Problems Solved: - Enhances vertical connectivity in semiconductor devices - Improves signal transmission efficiency - Enables more compact device designs
Benefits: - Increased performance and efficiency - Enhanced signal integrity - Compact device footprint
Commercial Applications: Title: "Innovative Semiconductor Devices with Enhanced Vertical Connectivity" This technology can be applied in various industries such as telecommunications, consumer electronics, and automotive for improved performance and efficiency in electronic devices.
Questions about Semiconductor Devices with Metal Interconnect: 1. How does the metal interconnect improve signal transmission in semiconductor devices? The metal interconnect provides a direct and efficient pathway for signals to travel vertically through the device, reducing signal loss and improving overall performance.
2. What are the key advantages of having a metal interconnect extending vertically through a semiconductor device? The vertical metal interconnect allows for more compact device designs, enhances signal integrity, and improves the overall efficiency of the device.
Original Abstract Submitted
semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. a top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer. method of fabricating the semiconductor device can include etching a via into a semiconductor substrate, filling the via with a metal material, forming a metal routing layer subsequent to filling the via, and removing a portion of a bottom of the semiconductor substrate to expose a bottom region of the metal filled via.
