Micron technology, inc. (20240282400). DIFFERENTIAL STROBE FAULT IDENTIFICATION simplified abstract
Contents
- 1 DIFFERENTIAL STROBE FAULT IDENTIFICATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIFFERENTIAL STROBE FAULT IDENTIFICATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Differential Strobe Fault Indication
- 1.11 Original Abstract Submitted
DIFFERENTIAL STROBE FAULT IDENTIFICATION
Organization Name
Inventor(s)
Scott E. Schaefer of Boise ID (US)
Paul A. Laberge of Shoreview MN (US)
DIFFERENTIAL STROBE FAULT IDENTIFICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282400 titled 'DIFFERENTIAL STROBE FAULT IDENTIFICATION
Simplified Explanation
The patent application describes methods, systems, and devices for differential strobe fault indication in memory devices. The fault is indicated using a read strobe signal, such as a read data strobe (RDQS) signal, based on various characteristics of the signal.
Key Features and Innovation
- Memory devices indicate faults using a read strobe signal.
- The read strobe signal can be a true RDQS (RDQS_T) signal or a complement RDQS (RDQS_C) signal.
- Faults are identified based on characteristics of the read strobe signal, such as patterns, voltage levels, or differences between signals.
- Host devices can determine fault types (recoverable or unrecoverable) based on fault signatures associated with the read strobe signal.
- Recovery operations can be performed by the host device based on the identified fault type.
Potential Applications
This technology can be applied in various memory devices to improve fault detection and recovery processes.
Problems Solved
This technology addresses the need for efficient fault indication and recovery in memory devices.
Benefits
- Enhanced fault detection capabilities.
- Improved fault recovery processes.
- Increased reliability of memory devices.
Commercial Applications
Potential commercial applications include the manufacturing of memory devices with advanced fault detection and recovery features, catering to industries that rely on reliable memory storage solutions.
Questions about Differential Strobe Fault Indication
What are the key characteristics of the read strobe signal used for fault indication?
The key characteristics include patterns, voltage levels, and differences between signals that help identify faults in memory devices.
How does the host device determine the fault type based on the read strobe signal?
The host device analyzes fault signatures associated with the read strobe signal to classify faults as recoverable or unrecoverable.
Original Abstract Submitted
methods, systems, and devices for differential strobe fault indication are described. a memory device may be configured to indicate a fault using a read strobe signal. the read strobe signal may be a read data strobe (rdqs) signal, such as a true rdqs (rdqs_t) signal or a complement rdqs (rdqs_c) signal. in some examples, the memory device may indicate the fault based on a characteristic of the read strobe signal, such as a pattern of the read strobe signal, a voltage level of the read strobe signal, a difference between a first read strobe signal and a second read strobe signal, or any combination thereof. in some examples, a host device may identify a fault type (e.g., recoverable or unrecoverable) based on a fault signature associated with a given characteristic of the read strobe signal. the host device may perform recovery operations based on the fault type identified.
