Micron technology, inc. (20240282390). SLOW-CHARGE-LOSS TRACKING USING FEEDBACK-CONTROL LOOP simplified abstract
Contents
SLOW-CHARGE-LOSS TRACKING USING FEEDBACK-CONTROL LOOP
Organization Name
Inventor(s)
Sampath Ratnam of San Jose CA (US)
Steven Michael Kientz of Westminster CO (US)
SLOW-CHARGE-LOSS TRACKING USING FEEDBACK-CONTROL LOOP - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282390 titled 'SLOW-CHARGE-LOSS TRACKING USING FEEDBACK-CONTROL LOOP
Simplified Explanation: Various embodiments of the technology use a feedback control loop to track slow charge loss (SCL) for a memory cell in a memory device, allowing for the adjustment of read level voltages used to read data from the memory cell.
Key Features and Innovation:
- Feedback control loop to track slow charge loss (SCL)
- Adjustment of read level voltages based on SCL tracking
- Enhancing the reliability and performance of memory devices
Potential Applications: This technology can be applied in various memory devices such as solid-state drives, flash memory, and other non-volatile memory technologies.
Problems Solved:
- Addressing slow charge loss (SCL) in memory cells
- Improving read level voltage adjustments for better data reading accuracy
Benefits:
- Enhanced reliability and performance of memory devices
- Improved data reading accuracy
- Extended lifespan of memory cells
Commercial Applications: Potential commercial uses include the manufacturing of more reliable and high-performance memory devices, catering to industries such as data storage, consumer electronics, and computing.
Questions about Memory Cell Technology 1. How does the feedback control loop help in tracking slow charge loss (SCL) in memory cells? 2. What are the potential implications of adjusting read level voltages based on SCL tracking in memory devices?
Frequently Updated Research: Stay updated on the latest advancements in memory cell technology, particularly in the field of feedback control loops and slow charge loss tracking.
Original Abstract Submitted
various embodiments use a feedback-control loop to track slow charge loss (scl) for a memory cell of a memory device, which can be used to adjust one or more read level voltages used to read data from the memory cell.
