Micron technology, inc. (20240264745). EFFICIENCY FOR CONSECUTIVE READ OPERATIONS simplified abstract
Contents
- 1 EFFICIENCY FOR CONSECUTIVE READ OPERATIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EFFICIENCY FOR CONSECUTIVE READ OPERATIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Systems
- 1.13 Original Abstract Submitted
EFFICIENCY FOR CONSECUTIVE READ OPERATIONS
Organization Name
Inventor(s)
Giuseppe Cariello of Boise ID (US)
EFFICIENCY FOR CONSECUTIVE READ OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240264745 titled 'EFFICIENCY FOR CONSECUTIVE READ OPERATIONS
Simplified Explanation
The patent application describes methods, systems, and devices for improving efficiency in consecutive read operations in memory systems.
- Memory system receives a first command for a read operation in memory cells storing more than one bit.
- Initiates the first read operation by applying voltage to access lines.
- Receives a second command for a consecutive read operation without discharging the access lines after the first read operation.
Key Features and Innovation
- Improved efficiency in consecutive read operations in memory systems.
- Ability to perform consecutive read operations without discharging access lines.
- Enhanced speed and performance in reading data from memory cells.
Potential Applications
- Data storage systems
- Computer memory modules
- Embedded systems
- Solid-state drives
Problems Solved
- Increased efficiency in reading data from memory cells
- Reduced latency in consecutive read operations
- Enhanced overall performance of memory systems
Benefits
- Faster data retrieval
- Improved system responsiveness
- Enhanced user experience
- Increased efficiency in memory operations
Commercial Applications
The technology can be applied in various commercial sectors such as data centers, consumer electronics, and automotive systems to enhance data storage and retrieval processes, leading to improved performance and user experience.
Prior Art
Readers interested in prior art related to this technology can explore research papers, patents, and industry publications in the field of memory systems and data storage technologies.
Frequently Updated Research
Researchers are continually exploring ways to enhance memory systems' efficiency and performance, leading to advancements in consecutive read operations and data retrieval processes.
Questions about Memory Systems
How does the technology improve efficiency in consecutive read operations?
The technology allows for faster consecutive read operations by avoiding the discharge of access lines between reads, leading to improved performance in memory systems.
What are the potential applications of this technology beyond memory systems?
This technology can be applied in various sectors such as data centers, consumer electronics, and automotive systems to enhance data storage and retrieval processes, improving overall system performance and user experience.
Original Abstract Submitted
methods, systems, and devices for improved efficiency for consecutive read operations are described. for example, a memory system may receive a first command indicating a first read operation in a block of memory cells that are each configured to store more than one bit. in response to receiving the first command, the memory system may initiate the performance of the first read operation by applying a voltage to a set of access lines associated with the block of memory cells. the memory system may additionally receive a second read command indicating a second, consecutive read operation in the block of memory cells, where the second command includes an indication to refrain from discharging the set of access lines. here, the memory system may initiate the performance of the second read operation without first discharging the set of access lines after the performance of the first read operation.
