Micron technology, inc. (20240260254). SEMICONDUCTOR DEVICE WITH VERTICAL BODY CONTACT AND METHODS FOR MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE WITH VERTICAL BODY CONTACT AND METHODS FOR MANUFACTURING THE SAME

Organization Name

micron technology, inc.

Inventor(s)

Kamal M. Karda of Boise ID (US)

Haitao Liu of Boise ID (US)

Si-Woo Lee of Boise ID (US)

Chandra Mouli of Boise ID (US)

SEMICONDUCTOR DEVICE WITH VERTICAL BODY CONTACT AND METHODS FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240260254 titled 'SEMICONDUCTOR DEVICE WITH VERTICAL BODY CONTACT AND METHODS FOR MANUFACTURING THE SAME

The abstract describes methods, apparatuses, and systems related to a memory device with transistor body contacts that extend vertically across stacked circuit layers and connect to body portions of data access transistors.

  • Memory device includes storage cells and access circuits on stacked layers
  • Transistor body contacts provide a route for leakage away from data storage circuits
  • Contacts connect to body portions of data access transistors when off

Potential Applications: - Memory devices in electronic devices - Data storage systems in computers - Semiconductor industry for improved memory technology

Problems Solved: - Leakage issues in data storage circuits - Enhanced efficiency in memory devices - Improved performance in stacked circuit layers

Benefits: - Reduced leakage in data storage circuits - Enhanced data access transistor functionality - Increased efficiency in memory devices

Commercial Applications: Title: "Innovative Memory Device Technology for Enhanced Data Storage" This technology can be used in various electronic devices, data storage systems, and semiconductor applications to improve memory performance and efficiency, potentially leading to advancements in the industry.

Prior Art: Research related to memory device technology, transistor body contacts, and stacked circuit layers can be found in academic journals, patent databases, and industry publications.

Frequently Updated Research: Stay updated on advancements in memory device technology, semiconductor innovations, and data storage systems to understand the latest developments in the field.

Questions about Memory Device Technology: 1. How does the vertical extension of transistor body contacts impact data storage circuits? 2. What are the potential implications of this technology on the semiconductor industry?


Original Abstract Submitted

methods, apparatuses, and systems related to a memory device having transistor body contacts that extend vertically across stacked circuit layers and connect to body portions of data access transistors are described. a memory device may include storage cells and corresponding access circuits on each of the stacked layers. the vertically extending transistor body contacts may provide a route for leakage away from data storage circuits when the data access transistors are off.