Micron technology, inc. (20240258233). STAIRCASE LANDING PADS VIA RIVETS simplified abstract
Contents
STAIRCASE LANDING PADS VIA RIVETS
Organization Name
Inventor(s)
Harsh Narendrakumar Jain of Boise ID (US)
STAIRCASE LANDING PADS VIA RIVETS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258233 titled 'STAIRCASE LANDING PADS VIA RIVETS
The patent application describes methods, systems, and devices for staircase landing pads using rivets. A memory device is designed with a staircase region containing a stack of materials, including word lines that decrease in length to form a staircase structure. A rivet connects a word line with a conductive pillar, which then connects to supporting circuitry. The staircase region also includes an oxide material to isolate the conductive pillar from other word lines.
- Memory device with staircase region and stack of materials
- Word lines forming a staircase structure
- Rivet connecting word line with conductive pillar
- Conductive pillar linking to supporting circuitry
- Varying thickness of word lines near the conductive pillar
- Oxide material isolating the conductive pillar
Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology
Problems Solved: - Efficient data storage - Improved circuit connectivity - Space optimization in electronic devices
Benefits: - Enhanced memory device performance - Increased data processing speed - Compact design for electronic devices
Commercial Applications: Title: Innovative Memory Devices for Enhanced Data Storage This technology can be applied in various industries such as: - Electronics manufacturing - Computer hardware development - Semiconductor research and development
Questions about the technology: 1. How does the varying thickness of word lines impact the performance of the memory device? 2. What are the potential challenges in implementing this technology in commercial memory devices?
Frequently Updated Research: Researchers are continuously exploring new materials and designs to enhance memory device performance and efficiency. Stay updated on the latest advancements in semiconductor technology for potential improvements in memory devices.
Original Abstract Submitted
methods, systems, and devices for staircase landing pads via rivets are described. a memory device may include a staircase region with a stack of materials that includes a set of word lines, where the set of word lines progressively decrease in length to form a staircase structure. the staircase region may additionally include a rivet that couples a first word line from the set of word lines with a conductive pillar. additionally, the conductive pillar may traverse the stack perpendicularly to the set of word lines and may couple the first word line with supporting circuitry. in some cases, a first thickness of the first word line adjacent to the conductive pillar may be greater than a second thickness of other word lines adjacent to the conductive pillar. the staircase region may additionally include an oxide material that isolates the conductive pillar from the other word lines.
