Micron technology, inc. (20240257855). MEMORY CELL SENSING ARCHITECTURE simplified abstract
Contents
MEMORY CELL SENSING ARCHITECTURE
Organization Name
Inventor(s)
Daniele Vimercati of El Dorado Hills CA (US)
Eric Carman of San Francisco CA (US)
MEMORY CELL SENSING ARCHITECTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240257855 titled 'MEMORY CELL SENSING ARCHITECTURE
Simplified Explanation: The patent application describes techniques and configurations for electronic memory, including memory cells coupled with plate lines, word lines, and bit lines, as well as a sense component with capacitors for adjusting voltage.
- Memory cells are organized into two sets, each coupled with plate lines, word lines, and bit lines.
- A sense component includes capacitors that adjust the voltage of nodes connected to the bit lines.
- Additional capacitors are coupled with both nodes of the sense component to support voltage adjustment.
Key Features and Innovation:
- Organization of memory cells into sets with plate lines, word lines, and bit lines.
- Sense component with capacitors for adjusting voltage of nodes connected to bit lines.
- Additional capacitors for further voltage adjustment support.
Potential Applications:
- Electronic devices requiring efficient and adjustable memory configurations.
- Systems where precise voltage adjustments in memory components are necessary.
Problems Solved:
- Efficient organization of memory cells for optimal performance.
- Precise voltage adjustment in memory components.
Benefits:
- Improved memory performance and efficiency.
- Enhanced control over voltage adjustments in memory components.
Commercial Applications: Potential commercial applications include:
- Consumer electronics
- Data storage systems
- Embedded systems
Questions about Electronic Memory: 1. How does the sense component with capacitors contribute to the efficiency of memory systems? 2. What are the advantages of organizing memory cells into sets with plate lines, word lines, and bit lines?
Original Abstract Submitted
techniques and configurations for electronic memory are described. an apparatus may include a first set of memory cells coupled with a first plate line and a word line, where a memory cell in the first set of memory cells may be coupled with a first bit line, and a second set of memory cells coupled with a second plate line and the word line, where a memory cell of the second set of memory cells may be coupled with a second bit line. the apparatus may also include a sense component having a first node coupled with the first bit line and a first capacitor and a second node coupled with the second bit line and a second capacitor. also, a set of capacitors may be coupled with both nodes. the capacitors may support adjustment of the voltage of the nodes of the sense component.
