Micron technology, inc. (20240256448). SENSE AMPLIFIERS AS STATIC RANDOM ACCESS MEMORY CACHE simplified abstract

SENSE AMPLIFIERS AS STATIC RANDOM ACCESS MEMORY CACHE

Organization Name

micron technology, inc.

Inventor(s)

Peter L. Brown of Eagle ID (US)

Glen E. Hush of Boise ID (US)

Troy A. Manning of Meridian ID (US)

Timothy P. Finkbeiner of Boise ID (US)

Troy D. Larsen of Meridian ID (US)

SENSE AMPLIFIERS AS STATIC RANDOM ACCESS MEMORY CACHE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240256448 titled 'SENSE AMPLIFIERS AS STATIC RANDOM ACCESS MEMORY CACHE

Simplified Explanation

The patent application relates to sense amplifiers in a memory device serving as an SRAM cache. The sense amplifiers can store data and metadata of a cache line when disconnected from digit lines in one mode and sense data from the memory array in another mode.

• Sense amplifiers in a memory device serve as an SRAM cache
• Sense amplifiers can store data and metadata of a cache line when disconnected from digit lines
• Sense amplifiers can sense data from the memory array in another mode

Key Features and Innovation

• Ability to store data and metadata of a cache line in sense amplifiers when disconnected from digit lines
• Efficient communication of data based on metadata from sense amplifiers to the processing device
• Seamless transition between modes for sense amplifiers to connect to the memory array and sense data

Potential Applications

The technology can be used in various memory devices, especially in systems requiring fast access to cached data.

Problems Solved

• Efficient storage and retrieval of cache line data and metadata
• Seamless transition between different modes of operation for sense amplifiers

Benefits

• Improved performance in accessing cached data
• Enhanced efficiency in data storage and retrieval processes

Commercial Applications

The technology can be applied in high-performance computing systems, data centers, and other memory-intensive applications to optimize data access and processing speed.

Prior Art

Further research can be conducted in the field of memory devices, sense amplifiers, and cache systems to explore existing technologies and innovations related to this patent application.

Frequently Updated Research

Stay updated on advancements in memory device technology, cache systems, and sense amplifier designs to enhance the efficiency and performance of data storage and retrieval processes.

Questions about Sense Amplifiers in Memory Devices

How do sense amplifiers in memory devices improve data access speed?

Sense amplifiers in memory devices enhance data access speed by efficiently storing and retrieving cache line data and metadata, optimizing the communication of data to the processing device based on metadata.

What are the key features of sense amplifiers in memory devices?

The key features of sense amplifiers in memory devices include the ability to store data and metadata of cache lines, seamless transition between different modes of operation, and efficient communication of data based on metadata to the processing device.

Original Abstract Submitted

methods, systems, and devices related to sense amplifiers of a memory device serving as a static random access memory (sram) cache. for example, a memory array can be coupled to sense amplifiers. in a first mode, the sense amplifiers can be electrically disconnect from digit lines of the memory array. in the first mode, data and metadata of a cache line can be stored in the sense amplifiers when electrically disconnected from the number of digit lines. in the first mode, a portion of the data can be communicated, based on the metadata, from the sense amplifiers to the processing device. in a second mode, the sense amplifiers can connect to the memory array and sense data from the memory array.