Micron technology, inc. (20240256155). MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMAND TYPE simplified abstract
Contents
MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMAND TYPE
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Ching-Huang Lu of Fremont CA (US)
Zhenming Zhou of San Jose CA (US)
MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMAND TYPE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240256155 titled 'MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMAND TYPE
Simplified Explanation: This patent application describes a memory device that can detect read commands and select different voltage patterns based on whether the command is from a host device or not.
Key Features and Innovation:
- Memory device detects read commands for data retrieval.
- Determines if the command is from a host device.
- Selects voltage patterns based on the origin of the command.
- Executes read commands using the selected voltage pattern.
Potential Applications: This technology could be used in various memory devices such as solid-state drives, embedded systems, and computer memory modules.
Problems Solved: This technology addresses the need for efficient data retrieval and management in memory devices by optimizing voltage patterns based on the source of read commands.
Benefits:
- Improved performance in data retrieval.
- Enhanced efficiency in memory device operations.
- Customized voltage patterns for different types of read commands.
Commercial Applications: The technology could have commercial applications in the data storage industry, improving the speed and reliability of memory devices in various electronic products.
Prior Art: Researchers interested in this technology may want to explore prior patents related to memory device optimization and data retrieval techniques.
Frequently Updated Research: Stay updated on advancements in memory device technology, particularly in the optimization of voltage patterns for read commands.
Questions about Memory Device Optimization: 1. How does the memory device determine the origin of a read command? 2. What are the potential implications of using different voltage patterns for read commands in memory devices?
Original Abstract Submitted
in some implementations, a memory device may detect a read command associated with reading data stored by the memory device. the memory device may determine whether the read command is from a host device in communication with the memory device. the memory device may select, based on whether the read command is from the host device, one of a first voltage pattern or a second voltage pattern to be applied to memory cells of the memory device to execute the read command, wherein the first voltage pattern is selected if the read command is from the host device and the second voltage pattern is selected if the read command is not from the host device, wherein the second voltage pattern is different from the first voltage pattern. the memory device may execute the read command using a selected one of the first voltage pattern or the second voltage pattern.
