Micron technology, inc. (20240251556). Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Nancy M. Lomeli of Boise ID (US)
Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251556 titled 'Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
Simplified Explanation: The patent application describes a method of forming liners outside of channel material strings in two tiers, which are then etched to create void spaces in the second tier. Conductively-doped semiconductive material is then applied to the channel material and heated to diffuse dopants, increasing conductivity.
Key Features and Innovation:
- Formation of liners outside of channel material strings in two tiers
- Etching of liners to create void spaces in the second tier
- Application of conductively-doped semiconductive material to the channel material
- Heating of the material to diffuse dopants and increase conductivity
Potential Applications: This technology could be used in semiconductor manufacturing processes to enhance the conductivity of channel material strings, improving the performance of electronic devices.
Problems Solved: This technology addresses the need for increased conductivity in semiconductive materials, which is crucial for the efficient operation of electronic devices.
Benefits:
- Improved conductivity in channel material strings
- Enhanced performance of electronic devices
- Increased efficiency in semiconductor manufacturing processes
Commercial Applications: Title: Enhanced Conductivity Technology for Semiconductor Manufacturing This technology could be applied in the production of various electronic devices, such as smartphones, computers, and other consumer electronics. It could also be utilized in the development of advanced semiconductor components for industrial applications.
Prior Art: Researchers can explore prior patents related to semiconductor manufacturing processes, conductive materials, and dopant diffusion techniques to gain a deeper understanding of the existing technology landscape.
Frequently Updated Research: Researchers in the field of semiconductor materials and manufacturing processes may be conducting ongoing studies to further optimize conductivity enhancement techniques and improve the performance of electronic devices.
Questions about Enhanced Conductivity Technology for Semiconductor Manufacturing: 1. How does this technology compare to existing methods of enhancing conductivity in semiconductive materials?
- This technology offers a unique approach by utilizing liners and void spaces to facilitate dopant diffusion, resulting in improved conductivity.
2. What potential challenges could arise in implementing this technology on a larger scale in semiconductor manufacturing?
- Scaling up this technology may require careful optimization of the manufacturing process to ensure consistent and reliable results.
Original Abstract Submitted
a liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. the liners are isotropically etched to form void-spaces in the one second tier above the one first tier. individual of the void-spaces are laterally-between the individual channel-material strings and the second-tier material in the one second tier. conductively-doped semiconductive material is formed against sidewalls of the channel material of the channel-material strings in the one first tier and that extends upwardly into the void-spaces in the one second tier. the conductively-doped semiconductive material is heated to diffuse conductivity-increasing dopants therein from the void-spaces laterally into the channel material laterally there-adjacent and upwardly into the channel material that is above the void-spaces.
