Micron technology, inc. (20240251555). Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract
Contents
Integrated Assemblies and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
Alyssa N. Scarbrough of Boise ID (US)
John D. Hopkins of Meridian ID (US)
Jordan D. Greenlee of Boise ID (US)
Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251555 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies
The integrated assembly described in the patent application consists of memory regions, an intermediate region, channel-material pillars, conductive posts, a panel, doped semiconductor material, insulative rings, and insulative liners.
- Memory regions and an intermediate region are separated by channel-material pillars.
- Conductive posts are located within the intermediate region.
- A panel extends across the memory regions and the intermediate region.
- Doped semiconductor material is present in the memory regions and the intermediate region.
- Insulative rings surround lower regions of the conductive posts.
- Insulative liners are along the upper regions of the conductive posts.
Potential Applications: - This technology could be used in the development of advanced memory storage devices. - It may find applications in the semiconductor industry for enhancing memory performance.
Problems Solved: - This technology addresses the need for improved memory storage solutions. - It tackles the challenges of increasing memory capacity and performance.
Benefits: - Enhanced memory storage capabilities. - Improved performance and efficiency in memory devices.
Commercial Applications: Title: Advanced Memory Storage Technology for Semiconductor Industry This technology could be utilized in the production of high-performance memory devices for various commercial applications in the semiconductor industry.
Questions about the technology: 1. How does this integrated assembly improve memory storage solutions? 2. What are the potential implications of this technology in the semiconductor industry?
Frequently Updated Research: Stay updated on the latest advancements in memory storage technology and semiconductor industry applications to leverage the benefits of this innovative integrated assembly.
Original Abstract Submitted
some embodiments include an integrated assembly having a first memory region, a second memory region offset from the first memory region, and an intermediate region between the first and second memory regions. channel-material-pillars are arranged within the memory regions. conductive posts are arranged within the intermediate region. a panel extends across the memory regions and the intermediate region. the panel is laterally between a first memory-block-region and a second memory-block-region. doped-semiconductor-material is within the memory regions and the intermediate region, and is directly adjacent to the panel. the doped-semiconductor-material is at least part of conductive source structures within the memory regions. insulative rings laterally surround lower regions of the conductive posts and are between the conductive posts and the doped-semiconductor-material. insulative liners are along upper regions of the conductive posts. some embodiments include methods of forming integrated assemblies.
