Micron technology, inc. (20240251552). NAND STAIRCASE LANDING PADS CONVERSION simplified abstract

NAND STAIRCASE LANDING PADS CONVERSION

Organization Name

micron technology, inc.

Inventor(s)

Mojtaba Asadirad of Boise ID (US)

Yiping Wang of Boise ID (US)

David H. Wells of Boise ID (US)

Matt J. King of Boise ID (US)

NAND STAIRCASE LANDING PADS CONVERSION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240251552 titled 'NAND STAIRCASE LANDING PADS CONVERSION

Simplified Explanation

The patent application describes methods, systems, and devices for converting NAND staircase landing pads in memory devices. It introduces lateral word line contacts that allow coupling a word line with a conductive pillar without directly placing the end of the pillar on the word line. This architecture reduces the total quantity of conductive pillars and minimizes manufacturing errors.

• Memory device includes lateral word line contacts
• Conductive pillar traverses stack of materials in memory device
• Coupling target word line with CMOS circuitry via a single conductive pillar
• Reduction in total quantity of conductive pillars
• Lower risk of manufacturing errors

Key Features and Innovation

• Introduction of lateral word line contacts in memory devices
• Coupling word lines with conductive pillars without direct contact
• Single conductive pillar for coupling target word line with CMOS circuitry
• Reduction in total quantity of conductive pillars
• Lower risk of manufacturing errors

Potential Applications

• Memory devices
• Semiconductor industry
• Integrated circuits

Problems Solved

• Simplifying memory device architecture
• Reducing manufacturing errors
• Minimizing the total quantity of conductive pillars

Benefits

• Improved efficiency in memory device design
• Lower risk of errors in manufacturing process
• Cost-effective solution for memory device production

Commercial Applications

Memory Device Architecture with Lateral Word Line Contacts: Improving Efficiency and Reducing Manufacturing Errors

Prior Art

Readers can explore prior patents related to memory device architecture, conductive pillars, and word line contacts in semiconductor technology.

Frequently Updated Research

Stay updated on advancements in memory device architecture, semiconductor technology, and conductive pillar design for memory devices.

Questions about Memory Device Architecture with Lateral Word Line Contacts

How do lateral word line contacts improve memory device design?

Lateral word line contacts allow for efficient coupling of word lines with conductive pillars, simplifying the memory device architecture and reducing the risk of errors in manufacturing.

What are the potential applications of this technology beyond memory devices?

This technology can also be applied in the semiconductor industry for integrated circuits, offering a cost-effective and efficient solution for various electronic devices.

Original Abstract Submitted

methods, systems, and devices for nand staircase landing pads conversion are described. a memory device may include one or more lateral word line contacts that may couple a word line with a conductive pillar that traverses a stack of materials of the memory device. the use of the lateral word line contact may allow for a conductive pillar to be coupled with a target word line without requiring an end of the conductive pillar to be placed directly on the word line. additionally, the memory architecture described herein may allow for the target word line to be coupled with cmos circuitry via a first conductive pillar without the use of a second conductive pillar, as the first conductive pillar may traverse the stack of materials and be coupled with the cmos circuitry. therefore, total quantity of conductive pillars may be reduced, and the risk of manufacturing errors may be lowered.