Micron technology, inc. (20240251543). MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES simplified abstract
Contents
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Karthik Sarpatwari of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251543 titled 'MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES
The patent application describes apparatuses and methods for forming memory cells with conductive regions, data lines, transistors, charge storage structures, and conductive structures.
- The apparatus includes a conductive region, first and second data lines, first and second memory cells, a conductive structure, and a conductive line.
- Each memory cell consists of two transistors and a charge storage structure, with the conductive structure separating them.
- The conductive line acts as the gate for all transistors in the apparatus.
Potential Applications:
- This technology could be used in the development of advanced memory storage devices.
- It may find applications in the semiconductor industry for creating high-density memory chips.
Problems Solved:
- Addresses the need for efficient and compact memory cell designs.
- Solves challenges related to data storage and retrieval in electronic devices.
Benefits:
- Improved memory cell performance and reliability.
- Enhanced data storage capabilities in electronic devices.
Commercial Applications:
- This technology could be valuable for companies producing memory chips for various electronic devices.
- It has the potential to impact the semiconductor market by offering more efficient memory solutions.
Prior Art:
- Researchers can explore prior patents related to memory cell design and semiconductor technology for further insights.
Frequently Updated Research:
- Stay updated on advancements in memory cell technology and semiconductor manufacturing processes for potential improvements in this innovation.
Questions about Memory Cell Technology: 1. How does this technology improve memory cell performance compared to traditional designs? 2. What are the potential challenges in implementing this innovation in commercial memory chip production?
Original Abstract Submitted
some embodiments include apparatuses and methods of forming the apparatuses. one of the apparatuses includes a conductive region, a first data line, a second data line, a first memory cell coupled to the first data line and the conductive region, a second memory cell coupled to the second data line and the conductive region, a conductive structure, and a conductive line. the first memory cell includes a first transistor coupled to a second transistor, the first transistor including a first charge storage structure. the second memory cell includes a third transistor coupled to a fourth transistor, the third transistor including a second charge storage structure. the conductive structure is located between and electrically separated from the first and second charge storage structures. the conductive line forms a gate of each of the first, second, third, and fourth transistors.
