Micron technology, inc. (20240250033). METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract
Contents
METHODS OF FORMING MICROELECTRONIC DEVICES
Organization Name
Inventor(s)
Shuangqiang Luo of Boise ID (US)
Jivaan Kishore Jhothiraman of Meridian ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240250033 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES
The microelectronic device described in the patent application consists of a stack structure with alternating layers of conductive and insulative materials, separated by dielectric slot structures. Each block within the stack structure includes a stadium structure, a filled trench, support structures, and dielectric liner structures.
- The stadium structure features staircase structures with steps that correspond to the edges of the tiers in the stack structure.
- The filled trench contains a dielectric material sandwiched between two additional dielectric materials.
- The support structures extend through the filled trench and tiers of the stack structure, providing structural integrity.
- The dielectric liner structures cover the sidewalls of the support structures, with first protrusions on the dielectric material and second protrusions on the conductive material of the stack structure tiers.
This innovative design allows for improved performance and efficiency in memory devices and electronic systems.
Potential Applications: - Memory devices - Microelectronic components - Integrated circuits
Problems Solved: - Enhanced structural integrity - Improved performance - Increased efficiency
Benefits: - Higher reliability - Better signal transmission - Compact design
Commercial Applications: Title: Advanced Microelectronic Devices for Enhanced Performance This technology can be utilized in the production of memory devices, microprocessors, and other electronic components, leading to more efficient and reliable products in the market.
Prior Art: Readers can explore prior research on microelectronic devices, stack structures, and memory device design to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Stay informed about the latest developments in microelectronic device design, stack structure optimization, and memory device innovations to remain at the forefront of technological advancements.
Questions about Microelectronic Devices: 1. How does the innovative stack structure design improve the performance of memory devices? 2. What are the potential challenges in implementing this advanced microelectronic technology in commercial products?
Original Abstract Submitted
a microelectronic device comprises a stack structure comprising an alternating sequence of conductive material and insulative material arranged in tiers, and having blocks separated by dielectric slot structures. each of the blocks comprises a stadium structure, a filled trench overlying the stadium structure, support structures extending through the filled trench and tiers of the stack structure, and dielectric liner structures covering sidewalls of the support structures. the stadium structure comprises staircase structures each having steps comprising edges of the tiers of the stack structure. the filled trench comprises a dielectric material interposed between at least two additional dielectric materials. the dielectric liner structures comprise first protrusions at vertical positions of the dielectric material, and second protrusions at vertical positions of the conductive material of the tiers of the stack structure. the second protrusions have greater horizontal dimensions than the first protrusions. memory devices, electronic systems, and methods are also described.
