Micron technology, inc. (20240244845). ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS simplified abstract
ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS
Organization Name
Inventor(s)
Albert Fayrushin of Boise ID (US)
Yingda Dong of Los Altos CA (US)
George Matamis of Eagle ID (US)
ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244845 titled 'ELECTRONIC DEVICES COMPRISING REDUCED CHARGE CONFINEMENT REGIONS IN STORAGE NODES OF PILLARS AND RELATED METHODS AND SYSTEMS
The abstract of the patent application describes an electronic device with a unique structure involving a stack of alternating dielectric and conductive materials, a pillar region with an oxide material and a storage node, and a charge confinement region aligned with the conductive materials.
- The electronic device includes a stack of dielectric and conductive materials.
- A pillar region extends vertically through the stack.
- An oxide material is present within the pillar region.
- A storage node is laterally adjacent to the oxide material.
- The charge confinement region of the storage node aligns horizontally with the conductive materials.
- The height of the charge confinement region is less than the height of the adjacent conductive materials.
Potential Applications: - Memory devices - Semiconductor devices - Integrated circuits
Problems Solved: - Enhanced charge confinement - Improved storage node structure
Benefits: - Increased device performance - Higher data storage capacity - Improved reliability
Commercial Applications: Title: Advanced Memory Devices for Next-Generation Electronics This technology can be utilized in the development of high-performance memory devices for various electronic applications, leading to improved efficiency and functionality in the market.
Questions about the technology: 1. How does the unique structure of this electronic device contribute to its performance? - The unique structure enhances charge confinement and storage capabilities, leading to improved device performance. 2. What potential impact could this technology have on the semiconductor industry? - This technology could revolutionize memory devices and semiconductor applications, leading to advancements in various electronic products.
Original Abstract Submitted
an electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. a charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. a height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. related methods and systems are also disclosed.
