Micron technology, inc. (20240244840). Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
Contents
Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Jordan D. Greenlee of Boise ID (US)
Nancy M. Lomeli of Boise ID (US)
Alyssa N. Scarbrough of Boise ID (US)
Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244840 titled 'Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
The memory array described in the patent application consists of memory blocks with vertical stacks of insulative and conductive tiers, through which channel-material strings of memory cells extend. Intervening material is present between the memory blocks, with bridges extending laterally between them.
- Memory blocks consist of vertical stacks of insulative and conductive tiers.
- Channel-material strings of memory cells extend through the tiers.
- Intervening material is present between memory blocks.
- Bridges extend laterally between immediately-laterally-adjacent memory blocks.
- Bridges are made of a different composition than the intervening material.
Potential Applications: - This technology could be used in the development of high-density memory storage devices. - It may find applications in the field of data storage and retrieval systems. - The innovation could be utilized in the creation of more efficient and compact memory arrays.
Problems Solved: - Addresses the need for increased memory storage capacity in a smaller footprint. - Improves the efficiency and performance of memory arrays. - Enhances the reliability and durability of memory storage devices.
Benefits: - Higher memory storage capacity in a compact design. - Improved efficiency and performance of memory arrays. - Enhanced reliability and durability of memory storage devices.
Commercial Applications: Title: "Innovative Memory Array Technology for High-Density Storage Devices" This technology has the potential to revolutionize the memory storage industry by offering higher capacity and improved performance in a smaller form factor. It could be of interest to companies involved in data storage, semiconductor manufacturing, and consumer electronics.
Questions about Memory Array Technology: 1. How does the composition of the bridges differ from the intervening material? The bridges are made of a different composition than the intervening material to provide structural support and connectivity between memory blocks. 2. What are the potential implications of this technology for the future of memory storage devices? This technology could lead to the development of more advanced and efficient memory storage devices with increased capacity and reliability.
Original Abstract Submitted
a memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. the intervening material in a lowest of the conductive tiers comprises intervenor material. bridges extend laterally-between the immediately-laterally-adjacent memory blocks. the bridges comprise bridging material that is of different composition from that of the intervenor material. the bridges are longitudinally-spaced-along the immediately-laterally-adjacent memory blocks by the intervenor material and extend laterally into the immediately-laterally-adjacent memory blocks. other embodiments, including method, are disclosed.
