Micron technology, inc. (20240243077). APPARATUS INCLUDING AIR GAP IN SCRIBE REGION OF SEMICONDUCTOR DEVICE simplified abstract
Contents
APPARATUS INCLUDING AIR GAP IN SCRIBE REGION OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shigeru Sugioka of Higashihiroshima (JP)
APPARATUS INCLUDING AIR GAP IN SCRIBE REGION OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243077 titled 'APPARATUS INCLUDING AIR GAP IN SCRIBE REGION OF SEMICONDUCTOR DEVICE
The abstract of the patent application describes an apparatus with an insulating structure in the scribe region, multiple metal layers including a top metal layer in the insulating structure in the scribe region, a groove on top of the insulating structure in the scribe region, and an air gap between the top metal layer and the groove in the scribe region.
- Simplified Explanation:
- The apparatus has layers of metal and insulating structures in the scribe region. - A top metal layer is present in the insulating structure in the scribe region. - A groove is located on top of the insulating structure in the scribe region. - An air gap separates the top metal layer from the groove in the scribe region.
Key Features and Innovation: - Insulating structure in the scribe region. - Multiple metal layers with a top metal layer. - Groove on top of the insulating structure. - Air gap between the top metal layer and the groove.
Potential Applications: - Semiconductor manufacturing. - Electronics industry. - Integrated circuit fabrication.
Problems Solved: - Improved insulation in the scribe region. - Enhanced metal layer integration. - Better air gap management.
Benefits: - Increased efficiency in metal layer placement. - Enhanced overall device performance. - Improved reliability and durability.
Commercial Applications: - Semiconductor fabrication equipment. - Electronics manufacturing tools. - Research and development in the semiconductor industry.
Questions about the Technology: 1. How does the presence of the air gap benefit the overall performance of the apparatus? 2. What specific challenges in semiconductor manufacturing does this innovation address?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor manufacturing techniques. - Explore new materials and processes for enhancing metal layer integration.
Original Abstract Submitted
according to one or more embodiments, an apparatus includes an insulating structure in the scribe region, a plurality of metal layers, the metal layers including a top metal layer in the insulating structure in the scribe region, a groove on a top of the insulating structure in the scribe region, and an air gap between the top metal layer and the groove in the scribe region.
