Micron technology, inc. (20240237352). MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICALLY BETWEEN TIERED DECKS, AND RELATED METHODS simplified abstract

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MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICALLY BETWEEN TIERED DECKS, AND RELATED METHODS

Organization Name

micron technology, inc.

Inventor(s)

Darwin A. Clampitt of Wilder ID (US)

John D. Hopkins of Meridian ID (US)

Matthew J. King of Boise ID (US)

Roger W. Lindsay of Boise ID (US)

Kevin Y. Titus of Meridian ID (US)

MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICALLY BETWEEN TIERED DECKS, AND RELATED METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240237352 titled 'MICROELECTRONIC DEVICES WITH SOURCE REGION VERTICALLY BETWEEN TIERED DECKS, AND RELATED METHODS

Simplified Explanation:

The patent application describes a microelectronic device with a pair of stack structures, each consisting of insulative and conductive structures arranged in tiers. Pillars extend through these structures from a source region towards drain regions above and below.

  • The device includes a pair of stack structures with alternating insulative and conductive tiers.
  • Pillars extend through the structures from a source region towards drain regions.
  • The device is designed for microelectronic applications.

Key Features and Innovation:

  • Vertically alternating insulative and conductive structures in stack formations.
  • Pillars extending through the structures from a source region to drain regions.
  • Efficient design for microelectronic devices.

Potential Applications:

  • Semiconductor manufacturing
  • Integrated circuits
  • Microprocessor technology

Problems Solved:

  • Efficient vertical integration of insulative and conductive structures.
  • Enhanced performance in microelectronic devices.
  • Improved connectivity between source and drain regions.

Benefits:

  • Increased efficiency in microelectronic device performance.
  • Enhanced vertical integration capabilities.
  • Improved connectivity and conductivity.

Commercial Applications:

The technology can be utilized in various industries such as semiconductor manufacturing, integrated circuits, and microprocessor technology. Its efficient design and enhanced performance make it a valuable asset in the development of advanced electronic devices.

Prior Art:

Readers can explore prior patents related to microelectronic devices, stack structures, and pillar integration in semiconductor technology to gain a deeper understanding of the existing knowledge in this field.

Frequently Updated Research:

Researchers are constantly exploring new ways to improve the efficiency and performance of microelectronic devices through advancements in stack structure design and pillar integration techniques.

Questions about Microelectronic Device Technology:

1. How does the alternating insulative and conductive tier design contribute to the performance of the microelectronic device? 2. What are the potential challenges in integrating pillars through stack structures in microelectronic devices?


Original Abstract Submitted

a microelectronic device includes a pair of stack structures. the pair comprises a lower stack structure and an upper stack structure overlying the lower stack structure. the lower stack structure and the upper stack structure each comprise a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. a source region is vertically interposed between the lower stack structure and the upper stack structure. a first array of pillars extends through the upper stack structure, from proximate the source region toward a first drain region above the upper stack structure. a second array of pillars extend through the lower stack structure, from proximate the source region toward a second drain region below the lower stack structure. additional microelectronic devices are also disclosed, as are related methods and electronic systems.