Micron technology, inc. (20240234311). REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE simplified abstract
Contents
REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE
Organization Name
Inventor(s)
Michael A. Smith of Boise ID (US)
Vladimir Mikhalev of Boise ID (US)
REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234311 titled 'REDUCED PITCH MEMORY SUBSYSTEM FOR MEMORY DEVICE
The memory device described in the patent application consists of an array of memory cells and multiple bit-lines, each connected to a set of memory cells. Additionally, the memory device includes a memory subsystem with first and second memory circuits, where each first memory circuit is positioned next to a second memory circuit. Each first memory circuit has a first bit-line connection, and each second memory circuit has a second bit-line connection. These connections link to respective bit-lines, with the first and second bit-line connections located on specific connection lines within the memory subsystem.
- The memory device features a unique layout where first and second memory circuits are laterally adjacent to each other.
- Each memory circuit includes a bit-line connection that connects to specific bit-lines within the memory array.
- The first and second bit-line connections are positioned on separate connection lines within the memory subsystem, with a predetermined distance between them.
Potential Applications: - This memory device layout could be beneficial in high-density memory applications. - The design may improve memory access speed and efficiency in data storage systems.
Problems Solved: - The layout addresses the challenge of optimizing memory cell connections in a compact space. - It aims to enhance memory performance and reliability in electronic devices.
Benefits: - Improved memory access speed and efficiency. - Enhanced reliability and performance in data storage applications.
Commercial Applications: Title: Innovative Memory Device Layout for Enhanced Performance in Data Storage Systems This technology could be utilized in various commercial applications such as smartphones, computers, servers, and other electronic devices requiring high-speed memory access.
Questions about the technology: 1. How does the unique layout of the memory device contribute to its performance? 2. What potential challenges could arise from implementing this memory device layout in practical applications?
Original Abstract Submitted
a memory device includes an array of memory cells and a plurality of bit-lines with each bit-line connected to a respective set of memory cells of the array of memory cells. the memory device includes a memory subsystem having first and second memory circuits. each first memory circuit can be disposed laterally adjacent to a second memory circuit. each first memory circuit includes a first bit-line connection and each second memory circuit including a second bit-line connection, the first and second bit-line connections can connect to respective bit-lines. each first bit-line connection is disposed on a first bit-line connection line of the memory subsystem and each second bit-line connection is disposed on a second bit-line connection line of the memory subsystem, and the second bit-line connection line can be offset from the first bit-line connection line by a predetermined distance that is greater than zero.
