Micron technology, inc. (20240233843). SELECTIVE DATA PATTERN WRITE SCRUB FOR A MEMORY SYSTEM simplified abstract
Contents
SELECTIVE DATA PATTERN WRITE SCRUB FOR A MEMORY SYSTEM
Organization Name
Inventor(s)
Zhongguang Xu of San Jose CA (US)
Murong Lang of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
SELECTIVE DATA PATTERN WRITE SCRUB FOR A MEMORY SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240233843 titled 'SELECTIVE DATA PATTERN WRITE SCRUB FOR A MEMORY SYSTEM
Simplified Explanation: The patent application describes a system with a memory device and a processing device that determines when to rewrite data in memory cells based on certain criteria.
Key Features and Innovation:
- Processing device determines when to rewrite memory cells based on failure to meet a threshold criterion.
- Data stored in memory cells with a specific logic state may be rewritten if the threshold criterion is not met.
- Adaptive system that adjusts rewrite operations based on the performance of previous operations.
Potential Applications: This technology could be used in various memory systems such as solid-state drives, flash memory, and other storage devices where data integrity is crucial.
Problems Solved: This technology addresses the issue of maintaining data integrity in memory systems by dynamically adjusting rewrite operations based on performance.
Benefits:
- Improved data reliability and integrity.
- Enhanced performance of memory systems.
- Efficient use of memory cells by optimizing rewrite operations.
Commercial Applications: The technology could be valuable in the data storage industry, particularly in the development of high-performance and reliable storage solutions for various applications.
Prior Art: Researchers interested in this technology may explore prior patents related to memory management, data storage, and system optimization to understand the existing knowledge in this field.
Frequently Updated Research: Stay informed about advancements in memory technology, data storage systems, and optimization techniques to enhance the performance and reliability of memory devices.
Questions about Memory Cell Rewrite Technology: 1. What are the potential implications of this technology on the data storage industry? 2. How does this technology compare to existing methods of memory cell management and data integrity maintenance?
Original Abstract Submitted
a system includes a memory device having a plurality of memory cells and a processing device operatively coupled to the memory device. the processing device is to determine to perform a rewrite on at least a portion of the plurality of memory cells. the processing device can determine that a number of rewrite operations at first subset of memory cells storing a first logic state fail to satisfy a threshold criterion. the processing device can also cause a rewrite of data stored at a second subset of memory cells storing a second logic state in response to determining the number of rewrite operations performed at the first subset of memory cells fail to satisfy the threshold criterion.
