Micron technology, inc. (20240233842). MANAGING TRAP-UP IN A MEMORY SYSTEM simplified abstract

MANAGING TRAP-UP IN A MEMORY SYSTEM

Organization Name

micron technology, inc.

Inventor(s)

Pitamber Shukla of Boise ID (US)

Chi Ming W. Chu of Boise ID (US)

Avinash Rajagiri of Boise ID (US)

Ching-Huang Lu of Fremont CA (US)

Kenneth W. Marr of Boise ID (US)

MANAGING TRAP-UP IN A MEMORY SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240233842 titled 'MANAGING TRAP-UP IN A MEMORY SYSTEM

Simplified Explanation

The patent application describes methods, systems, and devices for managing trap-up in a memory system. It involves determining whether to perform program and erase cycles on a memory block based on the threshold voltage distribution of a dummy word line associated with the block.

• A request to erase a block of a memory device is received.
• A scan operation is performed to determine if the threshold voltage distribution for a dummy word line meets certain criteria.
• Based on the scan operation, it is decided whether to perform program and erase cycles on the block using a specific voltage level for a de-biasing operation.
• The voltage level used for de-biasing is lower than the voltage level used in prior de-biasing operations on the block.
• The management of the memory block is based on whether the program and erase cycling with the specific voltage level for de-biasing is performed.

Key Features and Innovation

• Determining whether to perform program and erase cycles based on the threshold voltage distribution of a dummy word line.
• Using a specific voltage level for de-biasing operations during program and erase cycles.
• Managing memory blocks based on the voltage level used for de-biasing.

Potential Applications

This technology can be applied in various memory systems and devices where efficient management of trap-up is crucial.

Problems Solved

This technology addresses the issue of trap-up in memory systems, ensuring optimal performance and longevity of memory blocks.

Benefits

• Improved memory system performance.
• Enhanced longevity of memory blocks.
• Efficient trap-up management.

Commercial Applications

The technology can be utilized in the development of advanced memory systems for various industries, including electronics, data storage, and computing.

Prior Art

Readers can explore prior research on trap-up management in memory systems to understand the evolution of this technology.

Frequently Updated Research

Stay updated on the latest advancements in memory system management and trap-up mitigation techniques for cutting-edge applications.

Questions about Memory System Trap-Up Management

How does trap-up affect the performance of memory systems?

Trap-up can degrade the performance of memory systems by causing issues such as data corruption and slower read/write speeds.

What are the key considerations in determining the optimal voltage level for de-biasing operations in memory systems?

The key considerations include the threshold voltage distribution of dummy word lines and the criteria for efficient program and erase cycles.

Original Abstract Submitted

methods, systems, and devices for managing trap-up in a memory system are described. a request to erase a block of a memory device may be received. based on the request, a scan operation for determining whether a threshold voltage distribution for a dummy word line associated with the block satisfies one or more criteria may be performed. based on the scan operation, whether to perform one or more program and erase cycles on the block using a first voltage level for a de-biasing operation of a program and erase (p/e) cycle may be determined. the first voltage level may be lower than a second voltage level for one or more prior de-biasing operations of one or more prior p/e cycles performed on the block. the block of memory may be managed based on whether the p/e cycling with the debiasing operation having the voltage level is performed.