Micron technology, inc. (20240233797). MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
Contents
MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL
Organization Name
Inventor(s)
Karthik Sarpatwari of Boise ID (US)
Kamal M. Karda of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240233797 titled 'MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL
The abstract describes an apparatus with multiple data lines and a memory cell, including various materials and elements.
- The apparatus includes a first data line, a second data line, and a third data line, all electrically separated from each other.
- A memory cell is coupled to the data lines, with a first material between the first and second data lines.
- A second material is located over the first data line and the first material, electrically separated from the first material and coupled to the third data line.
- A memory element is electrically coupled to the second material, separated from the first material and data lines.
Potential Applications: - This technology could be used in memory storage devices, such as solid-state drives. - It may also have applications in advanced computing systems requiring high-speed data processing.
Problems Solved: - This technology addresses the need for efficient memory storage solutions with improved data transfer speeds. - It also solves the challenge of integrating multiple data lines in a compact and effective manner.
Benefits: - Improved data storage and processing capabilities. - Enhanced efficiency and performance in computing systems. - Potential for smaller form factors and increased data storage capacity.
Commercial Applications: - This technology could be valuable in the development of next-generation memory devices for consumer electronics, data centers, and other high-tech industries.
Questions about the Technology: 1. How does this technology compare to traditional memory storage solutions? 2. What are the potential limitations or challenges associated with implementing this technology in practical applications?
Original Abstract Submitted
some embodiments include apparatuses and methods operating the apparatuses. one of the apparatuses includes a first data line located over a substrate, a second data line located over the first data line, a third data line located over the second data line and electrically separated from the first and second data lines, and a memory cell coupled to the first, second, and third data lines. the memory cell includes a first material between the first and second data lines and electrically coupled to the first and second data lines; a second material located over the first data line and the first material, the second material electrically separated from the first material and electrically coupled to the third data line; and a memory element electrically coupled to the second material and electrically separated from the first material and first and second data lines.
