Micron technology, inc. (20240232028). REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR simplified abstract
Contents
REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR
Organization Name
Inventor(s)
Simon J. Lovett of Nampa ID (US)
REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240232028 titled 'REDUNDANCY AND SWAPPING SCHEME FOR MEMORY REPAIR
The abstract of the patent application describes a memory device with a bank of memory cells, including multiple groups of columns of memory cells. The device also includes controller circuitry to facilitate column repair redundancy swaps for repairing selected groups of memory cells at row address strobe (RAS) time. When an error condition is detected in at least one group of columns, the controller circuitry implements the necessary column repair redundancy swap on the corresponding group.
- Memory device with a bank of memory cells
- Multiple groups of columns of memory cells
- Controller circuitry for column repair redundancy swaps
- Repairing selected groups of memory cells at RAS time
- Implementation of column repair redundancy swaps upon error detection
Potential Applications: - Data storage devices - Computer memory systems - Embedded systems - Mobile devices - Industrial automation
Problems Solved: - Efficient repair of memory cell errors - Enhanced reliability of memory devices - Improved data integrity - Streamlined maintenance processes - Increased longevity of memory systems
Benefits: - Faster error detection and correction - Reduced downtime for memory repairs - Enhanced overall system performance - Cost-effective maintenance solutions - Extended lifespan of memory devices
Commercial Applications: Title: "Advanced Memory Repair Technology for Enhanced Data Integrity" This technology can be utilized in various commercial applications such as: - Data centers - Consumer electronics - Automotive systems - Medical devices - Aerospace industry
Questions about Memory Repair Technology: 1. How does the controller circuitry facilitate column repair redundancy swaps? The controller circuitry in the memory device provides information and implements the necessary column repair redundancy swaps for repairing selected groups of memory cells at RAS time.
2. What are the potential benefits of using this memory repair technology? The benefits of this technology include faster error detection and correction, reduced downtime for memory repairs, enhanced system performance, cost-effective maintenance solutions, and extended lifespan of memory devices.
Original Abstract Submitted
a memory device can include a bank of memory cells. the bank of memory cells can include multiple groups of columns of memory cells. the memory device can include controller circuitry to provide information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups at row address strobe (ras) time. upon detection of an error condition in at least one group of columns of memory cells, the controller circuitry can implement the column repair redundancy swap on the corresponding group.
