Micron technology, inc. (20240231676). VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE simplified abstract

VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE

Organization Name

micron technology, inc.

Inventor(s)

Kishore Kumar Muchherla of San Jose CA (US)

Devin M. Batutis of San Jose CA (US)

Xiangang Luo of Fremont CA (US)

Mustafa N. Kaynak of San Diego CA (US)

Peter Feeley of Boise ID (US)

Sivagnanam Parthasarathy of Carlsbad CA (US)

Sampath Ratnam of Boise ID (US)

Shane Nowell of Boise ID (US)

VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240231676 titled 'VOLTAGE BIN CALIBRATION BASED ON A VOLTAGE DISTRIBUTION REFERENCE VOLTAGE

The abstract of the patent application describes a method for determining a voltage shift for memory cells in a block family based on initial and subsequent reference values. The block family is categorized into different voltage bins with associated voltage offsets.

• Memory cells in a block family are analyzed to determine a voltage shift based on reference values.
• The block family is classified into different voltage bins depending on the determined voltage shift.
• Each voltage bin is associated with a specific voltage offset.
• The method allows for efficient management of memory cells within a block family based on voltage characteristics.
• This technology aims to optimize the performance and reliability of memory cells in electronic devices.

Potential Applications: - This technology can be applied in the development of more efficient and reliable memory systems for various electronic devices. - It can enhance the performance of storage devices such as solid-state drives and memory modules.

Problems Solved: - Efficient management of memory cells within a block family. - Optimization of voltage characteristics for improved performance and reliability.

Benefits: - Enhanced performance and reliability of memory cells. - Improved efficiency in managing memory systems. - Potential cost savings in memory system development.

Commercial Applications: Title: Voltage Shift Optimization Technology for Memory Cells This technology can be utilized in the development of advanced memory systems for consumer electronics, data centers, and other computing devices. It can offer competitive advantages in terms of performance, reliability, and cost-effectiveness.

Questions about Voltage Shift Optimization Technology for Memory Cells:

1. How does this technology improve the performance of memory systems? This technology optimizes the voltage characteristics of memory cells, leading to enhanced performance and reliability in electronic devices.

2. What are the potential applications of this technology in the consumer electronics industry? This technology can be applied in the development of more efficient and reliable memory systems for smartphones, laptops, and other consumer electronics.

Original Abstract Submitted

an amount of voltage shift is determined for one or more memory cells of a block family based on an initial reference value pertaining to the one or more memory cells and a subsequent reference value pertaining to the one or more memory cells. the block family is associated with a first voltage bin or a second voltage bin based on the determined amount of voltage shift. the first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.