Micron technology, inc. (20240231673). IDENTIFYING CENTER OF VALLEY IN MEMORY SYSTEMS simplified abstract

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IDENTIFYING CENTER OF VALLEY IN MEMORY SYSTEMS

Organization Name

micron technology, inc.

Inventor(s)

Kyungjin Kim of San Jose CA (US)

IDENTIFYING CENTER OF VALLEY IN MEMORY SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240231673 titled 'IDENTIFYING CENTER OF VALLEY IN MEMORY SYSTEMS

The abstract of the patent application describes a system component, such as a memory sub-system controller, that identifies a center of valley (CoV) of a set of read levels. When a read error is detected while reading data from memory components at a specific read level, the controller generates bins based on check failure bit count values and error count values from adjacent read levels. The CoV for the individual read level is computed based on the bins, and the read level used to read the data is updated accordingly.

  • The system component configures a memory sub-system controller to identify a center of valley (CoV) of a set of read levels.
  • When a read error occurs at a specific read level, the controller generates bins based on check failure bit count values and error count values from adjacent read levels.
  • The CoV for the individual read level is computed using the bins, and the read level used to read the data is updated based on the computed CoV.

Potential Applications: - Data storage systems - Error correction in memory components - Improving data read accuracy in electronic devices

Problems Solved: - Enhancing data read reliability - Minimizing errors in memory systems - Optimizing read level selection for improved performance

Benefits: - Increased data integrity - Enhanced system efficiency - Reduced data corruption risks

Commercial Applications: Title: "Enhancing Data Read Accuracy in Memory Systems" This technology could be utilized in various industries such as: - Data centers - Consumer electronics - Automotive systems

Prior Art: Researchers in the field of memory systems and error correction codes may have explored similar techniques for improving data read accuracy and reliability.

Frequently Updated Research: Stay informed about the latest advancements in memory system technology and error correction methods to enhance data integrity and system performance.

Questions about the technology: 1. How does the system component determine the center of valley (CoV) for a specific read level? 2. What are the potential implications of using this technology in data storage systems?


Original Abstract Submitted

aspects of the present disclosure configure a system component, such as a memory sub-system controller, to identify a center of valley (cov) of a set of read levels. the controller detects a read error associated with reading data from the set of memory components in accordance with an individual read level of a plurality of read levels and, in response to detecting the read error, generates a plurality of bins as a function of a plurality of check failure bit count values and one or more error count values corresponding to a set of read levels adjacent to the individual read level. the controller computes the cov for the individual read level based on a pair of read levels defined by a set of the plurality of bins and updates a read level used to read the data based on the computed cov.