Micron technology, inc. (20240231642). SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES simplified abstract
Contents
- 1 SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Sub-Systems
- 1.13 Original Abstract Submitted
SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES
Organization Name
Inventor(s)
Gianluca Nicosia of Boise ID (US)
Niccolo Righetti of Boise ID (US)
SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240231642 titled 'SELF-OPTIMIZING CORRECTIVE READ OFFSETS WITH LATERAL CHARGE MIGRATION PROXIES
Simplified Explanation
The patent application describes a memory sub-system with a memory device containing multiple cells, where a processing device is connected to the memory device to perform operations related to reading information from specific cells.
- The memory sub-system includes a memory device with multiple cells.
- A processing device is connected to the memory device.
- The processing device determines the level information of a set of cells, including a target cell for a read operation.
- It identifies a read level offset for the target cell based on the level information.
- The read operation is then performed according to the read level offset.
Key Features and Innovation
- Memory sub-system with a memory device and processing device.
- Determination of level information for cells.
- Identification of read level offset for target cell.
- Read operation performed based on read level offset.
Potential Applications
This technology can be applied in various memory systems, data storage devices, and computing systems where efficient reading of memory cells is crucial.
Problems Solved
- Enhances the efficiency of reading operations in memory systems.
- Improves the performance of data storage devices.
- Optimizes the functioning of computing systems.
Benefits
- Faster and more accurate reading of memory cells.
- Enhanced overall performance of memory systems.
- Increased efficiency in data storage and retrieval processes.
Commercial Applications
Title: Advanced Memory Sub-System for Enhanced Data Processing This technology can be utilized in the development of high-speed data storage devices, advanced computing systems, and memory-intensive applications in industries such as telecommunications, data centers, and artificial intelligence.
Prior Art
Readers interested in exploring prior art related to this technology can refer to research papers, patents, and industry publications on memory systems, data storage technologies, and semiconductor devices.
Frequently Updated Research
Researchers are continuously exploring ways to improve memory sub-systems, optimize data processing techniques, and enhance the performance of computing systems through advancements in memory technologies.
Questions about Memory Sub-Systems
How does the processing device determine the level information of cells in the memory device?
The processing device uses algorithms and data processing techniques to analyze the level information associated with each cell in the memory device, providing insights into their status and performance.
What are the potential implications of using read level offsets in memory operations?
By utilizing read level offsets, memory operations can be fine-tuned to improve efficiency, reduce latency, and enhance overall data processing speed in memory sub-systems.
Original Abstract Submitted
a memory sub-system with a memory device having a plurality of cells, and the plurality of cells having a set of cells, and a processing device operatively coupled to the memory device, the processing device to perform operations of determining a level information associated with the set of cells, where the set of cells comprise a target cell associated with a read operation, identifying a read level offset for the target cell based on the level information, and performing the read operation in accordance with the read level offset.
