Micron technology, inc. (20240224524). Integrated Assemblies, and Methods of Forming Integrated Assemblies simplified abstract
Contents
Integrated Assemblies, and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
John D. Hopkins of Meridian ID (US)
Jordan D. Greenlee of Boise ID (US)
Integrated Assemblies, and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224524 titled 'Integrated Assemblies, and Methods of Forming Integrated Assemblies
The abstract describes an integrated assembly with memory regions and an intermediate region containing channel-material pillars and conductive posts. Doped-semiconductor-material forms an H-shaped structure within the intermediate region.
- Integrated assembly with first and second memory regions and an intermediate region
- Channel-material pillars in memory regions
- Conductive posts in the intermediate region
- Doped-semiconductor-material forming an H-shaped structure
- First leg region, second leg region, and belt region within the intermediate region
Potential Applications: - Memory storage devices - Semiconductor manufacturing - Integrated circuit design
Problems Solved: - Efficient memory storage - Enhanced semiconductor performance - Improved integrated assembly design
Benefits: - Increased memory capacity - Faster data processing - Enhanced device reliability
Commercial Applications: Title: Advanced Memory Storage Solutions This technology can be utilized in the development of high-performance memory storage devices for various industries, including consumer electronics, data centers, and telecommunications.
Questions about the technology: 1. How does the H-shaped structure of the doped-semiconductor-material benefit the integrated assembly?
The H-shaped structure allows for efficient data transfer between the memory regions, enhancing overall performance.
2. What are the potential challenges in scaling up this integrated assembly for mass production?
Scaling up may require optimization of manufacturing processes and materials to ensure consistency and reliability in large-scale production.
Original Abstract Submitted
some embodiments include an integrated assembly having a first memory region, a second memory region, and an intermediate region between the first and second memory regions. the intermediate region has a first edge proximate the first memory region and has a second edge proximate the second memory region. channel-material-pillars are arranged within the first and second memory regions. conductive posts are arranged within the intermediate region. doped-semiconductor-material is within the intermediate region and is configured as a substantially h-shaped structure having a first leg region along the first edge, a second leg region along the second edge, and a belt region adjacent the panel. some embodiments include methods of forming integrated assemblies.
