Micron technology, inc. (20240224505). Memory Circuitry And Methods Used In Forming Memory Circuitry simplified abstract
Contents
Memory Circuitry And Methods Used In Forming Memory Circuitry
Organization Name
Inventor(s)
Jordan D. Greenlee of Nampa ID (US)
Silvia Borsari of Boise ID (US)
Prashant Raghu of Boise ID (US)
Elisabeth Barr of Boise ID (US)
Albert P. Chan of Boise ID (US)
Memory Circuitry And Methods Used In Forming Memory Circuitry - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224505 titled 'Memory Circuitry And Methods Used In Forming Memory Circuitry
Simplified Explanation: The patent application describes a method for forming memory circuitry using transistors with source/drain regions and a channel region. Digitline structures are created, each consisting of a conductive digitline and insulator material. Storage elements are then connected to the source/drain regions of the transistors.
- Transistors are formed with source/drain regions and a channel region.
- Digitline structures are created, each comprising a conductive digitline and insulator material.
- Storage elements are electrically coupled to the source/drain regions of the transistors.
- Insulating materials are used to cover and expose certain regions of the circuitry.
- The method allows for efficient formation of memory circuitry.
Potential Applications: This technology can be applied in the manufacturing of memory circuits for various electronic devices such as computers, smartphones, and IoT devices.
Problems Solved: This method addresses the need for efficient and reliable memory circuitry formation in electronic devices.
Benefits: - Improved memory circuitry performance - Enhanced reliability of memory storage - Efficient manufacturing process
Commercial Applications: Title: Advanced Memory Circuitry Formation Method for Electronic Devices This technology can be utilized in the production of memory chips for consumer electronics, data storage devices, and industrial applications. The method offers a cost-effective and reliable solution for memory circuitry manufacturing.
Prior Art: Further research can be conducted on semiconductor fabrication techniques and memory circuitry design to explore prior art related to this technology.
Frequently Updated Research: Researchers are continually exploring new methods for enhancing memory circuitry performance and reliability in electronic devices.
Questions about Memory Circuitry Formation: 1. How does this method improve the efficiency of memory circuitry formation? 2. What are the potential challenges in implementing this technology in large-scale production?
Original Abstract Submitted
a method used in forming memory circuitry comprises forming transistors individually comprising one source/drain region and another source/drain region. a channel region is between the one and the another source/drain regions. a conductive gate is operatively proximate the channel region. digitline structures are formed that are individually directly electrically coupled to the another source/drain regions of multiple of the transistors. the digitline structures individually comprise a conductive digitline and an insulator material thereatop. the insulator material has a top. first insulating material is formed directly above the tops of the insulator material and laterally-over longitudinal sides of the digitline structures and covers across the one source/drain regions laterally-between immediately-adjacent of the digitline structures. second insulating material is formed over the first insulating material. the second insulating material has a maximum vertical thickness directly above the digitline structures that is greater than its minimum lateral thickness over the longitudinal sides of the digitline structures. the first insulating material is etched through to expose the one source/drain regions. storage elements are formed that are individually electrically coupled to individual of the one source/drain regions. other embodiments, including structure, are disclosed.
