Micron technology, inc. (20240222300). SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS simplified abstract
SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Kyle K. Kirby of Eagle ID (US)
SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222300 titled 'SEMICONDUCTOR INTERCONNECT STRUCTURES WITH VERTICALLY OFFSET BONDING SURFACES, AND ASSOCIATED SYSTEMS AND METHODS
Simplified Explanation: This patent application describes semiconductor devices with interconnect structures featuring vertically offset bonding surfaces.
- The semiconductor device includes a semiconductor substrate covered by a dielectric material with an interconnect structure extending from it.
- The interconnect structure consists of conductive elements separated by a continuous region of insulating material.
- A perimeter structure surrounds the conductive elements and the continuous region, with an uppermost surface that is vertically offset from the dielectric material's surface.
Key Features and Innovation:
- Semiconductor device with vertically offset bonding surfaces in the interconnect structure.
- Use of conductive elements separated by insulating material for improved performance.
- Perimeter structure for added protection and structural integrity.
Potential Applications:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved:
- Enhanced electrical connectivity
- Improved structural stability
- Reduced signal interference
Benefits:
- Higher performance
- Increased reliability
- Enhanced durability
Commercial Applications: The technology can be applied in the manufacturing of advanced electronic devices, leading to more efficient and reliable products in the consumer electronics industry.
Prior Art: Researchers can explore prior patents related to semiconductor interconnect structures and bonding surfaces to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly exploring new materials and designs for semiconductor interconnect structures to enhance performance and efficiency.
Questions about Semiconductor Devices with Vertically Offset Bonding Surfaces: 1. What are the potential challenges in implementing vertically offset bonding surfaces in semiconductor devices? 2. How does the use of insulating material between conductive elements impact the overall performance of the device?
Original Abstract Submitted
semiconductor devices having interconnect structures with vertically offset bonding surfaces, and associated systems and methods, are disclosed herein. in one embodiment, a semiconductor device includes a semiconductor substrate at least partially covered by a first dielectric material having an upper surface, and an interconnect structure extending therefrom. the interconnect structure can include a plurality of conductive elements, and a continuous region of a first insulating material at least partially between the plurality of conductive elements. the plurality of conductive elements and the continuous region can have coplanar end surfaces. the interconnect structure can further include a perimeter structure at least partially surrounding the plurality of conductive elements and the continuous region. the perimeter structure can have an uppermost surface that can be vertically offset from the upper surface of the first dielectric material and/or the coplanar end surfaces.
