Micron technology, inc. (20240221841). FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract
Contents
FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS
Organization Name
Inventor(s)
Sheyang Ning of San Jose CA (US)
Lawrence Celso Miranda of San Jose CA (US)
Tomoko Ogura Iwasaki of San Jose CA (US)
FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240221841 titled 'FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS
The memory device described in the patent application includes pillars coupled with data lines and wordlines for data storage and retrieval. The control logic manages the discharging of wordlines after a program pulse and controls the voltages applied to the data lines to prevent soft erase.
- The memory device consists of pillars connected to data lines and wordlines.
- Control logic discharges wordlines after a program pulse is applied.
- Supply voltage is applied to the second data line to float the voltage of the second pillar.
- Ground voltage is applied to the first data line to inhibit soft erase associated with the selected wordline via the first pillar.
Potential Applications: - This technology can be used in various memory storage devices such as solid-state drives and flash memory. - It can also be applied in embedded systems, IoT devices, and consumer electronics for data storage purposes.
Problems Solved: - Prevents soft erase associated with selected wordlines. - Efficiently manages the discharging of wordlines after program pulses.
Benefits: - Enhanced data storage and retrieval efficiency. - Improved reliability and longevity of memory devices. - Reduced risk of data loss due to soft erase issues.
Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Storage This technology can be commercially utilized in the production of solid-state drives, flash memory chips, and other memory storage solutions. It can cater to the growing demand for high-speed, reliable data storage in various industries such as telecommunications, automotive, and consumer electronics.
Questions about Memory Device Technology: 1. How does the control logic prevent soft erase in memory devices?
- The control logic applies a ground voltage to the first data line to inhibit soft erase associated with the selected wordline via the first pillar.
2. What are the potential commercial applications of this memory device technology?
- This technology can be used in solid-state drives, flash memory chips, embedded systems, IoT devices, and consumer electronics for data storage purposes.
Original Abstract Submitted
a memory device includes a first pillar coupled with a first data line, a second pillar coupled with a second data line, and wordlines coupled with first and second pillars. control logic may cause wordlines to be discharged after a program pulse is applied to selected wordline. the control logic may apply a supply voltage to second data line to cause a voltage of second pillar to float. the control logic may apply a ground voltage to the first data line to inhibit soft erase associated with the selected wordline via first pillar.
