Micron technology, inc. (20240221840). MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS simplified abstract
Contents
MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS
Organization Name
Inventor(s)
Ezra Edward Hartz of Meridian ID (US)
MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240221840 titled 'MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS
The memory device described in the abstract is designed with an array of memory cells configured as single-level cell memory, along with control logic that is connected to this array of memory cells.
- The control logic is responsible for programming first data into multiple memory cells within the array, with this data having a specific voltage distribution relative to a first threshold voltage level.
- Without the need to erase the memory cells, the control logic then programs second data into the same memory cells, with this data having a different voltage distribution relative to a second threshold voltage level that is higher than the first threshold voltage level.
Potential Applications: - This technology could be used in various memory storage devices such as solid-state drives, USB flash drives, and memory cards. - It could also find applications in embedded systems, consumer electronics, and industrial automation where reliable and efficient memory storage is crucial.
Problems Solved: - Eliminates the need to erase memory cells before reprogramming, saving time and energy. - Allows for more efficient use of memory space by programming data at different voltage levels without erasing existing data.
Benefits: - Improved memory programming efficiency. - Enhanced data storage capacity. - Reduced energy consumption in memory operations.
Commercial Applications: Title: "Innovative Memory Device Technology for Enhanced Data Storage" This technology can be utilized in the development of high-performance memory storage solutions for various industries, leading to faster and more reliable data storage capabilities in consumer electronics, industrial applications, and data centers.
Questions about Memory Device Technology: 1. How does this memory device technology compare to traditional multi-level cell memory in terms of performance and reliability? 2. What are the potential challenges in implementing this technology on a larger scale for commercial applications?
Original Abstract Submitted
a memory device includes an array of memory cells configured as single-level cell memory and control logic operatively coupled with the array of memory cells. the control logic causes first data to be programmed to a plurality of memory cells of the array of memory cells, the first data including a first voltage distribution programmed relative to a first threshold voltage (vt) level. the control logic causes, without erasing the plurality of memory cells, second data to be programmed to the plurality of memory cells, the second data including a second voltage distribution programmed relative to a second vt level, wherein the second vt level is higher than the first vt level.
