Micron technology, inc. (20240221829). CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS simplified abstract
Contents
- 1 CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Questions about Cross-Point Pillar Architecture
- 1.10 Original Abstract Submitted
CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS
Organization Name
Inventor(s)
Innocenzo Tortorelli of Cernusco Sul Naviglio (IT)
Fabio Pellizzer of Boise ID (US)
Mattia Robustelli of Milano (IT)
Alessandro Sebastiani of Piacenza (IT)
CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240221829 titled 'CROSS-POINT PILLAR ARCHITECTURE FOR MEMORY ARRAYS
Simplified Explanation
The patent application describes a cross-point pillar architecture for memory arrays, where multiple selector devices made of chalcogenide material are used to access pillars within the array. Pillar access lines are coupled with selector devices, forming a cross point architecture for pillar selection.
- Multiple selector devices made of chalcogenide material are used to access pillars within a memory array.
- Pillar access lines are coupled with selector devices, allowing for efficient pillar selection.
- Pillars and corresponding selector devices are located at overlapping portions of the pillar access lines, forming a cross point architecture for pillar activation.
- Selector devices act in pairs to select or activate a pillar with a selection voltage.
Potential Applications
This technology can be applied in various memory storage devices, such as solid-state drives, to improve data access speeds and efficiency. It can also be used in high-performance computing systems to enhance memory array architectures.
Problems Solved
This technology addresses the need for efficient and reliable access to memory array pillars, improving overall performance and data retrieval speeds in memory storage devices.
Benefits
The use of a cross-point pillar architecture with selector devices made of chalcogenide material offers faster and more precise access to memory array pillars, leading to enhanced performance and efficiency in memory storage devices.
Commercial Applications
- Solid-state drives
- High-performance computing systems
- Data centers
Questions about Cross-Point Pillar Architecture
How does the cross-point pillar architecture improve memory array performance?
The cross-point pillar architecture allows for efficient selection and activation of memory array pillars, leading to faster data access speeds and improved overall performance.
What are the potential applications of selector devices made of chalcogenide material in memory storage devices?
Selector devices made of chalcogenide material can be used to enhance memory array architectures in solid-state drives, high-performance computing systems, and data centers, improving data access speeds and efficiency.
Original Abstract Submitted
methods, systems, and devices for a cross-point pillar architecture for memory arrays are described. multiple selector devices may be configured to access or activate a pillar within a memory array, where the selector devices may each be or include a chalcogenide material. a pillar access line may be coupled with multiple selector devices, where each selector device may correspond to a pillar associated with the pillar access line. pillar access lines on top and bottom of the pillars of the memory array may be aligned in a square or rectangle formation, or in a hexagonal formation. pillars and corresponding selector devices on top and bottom of the pillars may be located at overlapping portions of the pillar access lines, thereby forming a cross point architecture for pillar selection or activation. the selector devices may act in pairs to select or activate a pillar upon application of a respective selection voltage.
