Micron technology, inc. (20240221806). SIGNAL DEVELOPMENT CIRCUITRY LAYOUTS IN A MEMORY DEVICE simplified abstract
Contents
SIGNAL DEVELOPMENT CIRCUITRY LAYOUTS IN A MEMORY DEVICE
Organization Name
Inventor(s)
Daniele Vimercati of El Dorado Hills CA (US)
SIGNAL DEVELOPMENT CIRCUITRY LAYOUTS IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240221806 titled 'SIGNAL DEVELOPMENT CIRCUITRY LAYOUTS IN A MEMORY DEVICE
The abstract describes methods, systems, and devices for signal development circuitry layouts in a memory device. The signal development circuitry is positioned in multiple levels of a memory die relative to a substrate. For example, first transistors for developing access signals may be located on a first level, while second transistors for developing the access signals may be on a second level. The formation of these transistors involves common processing operations with other transistors on their respective levels.
- Signal development circuitry layouts in a memory device are described.
- The circuitry is positioned in multiple levels of a memory die.
- First transistors for access signals are on a first level, while second transistors are on a second level.
- Common processing operations are used for the formation of these transistors with other transistors on their respective levels.
Potential Applications: - Memory devices - Semiconductor manufacturing - Integrated circuit design
Problems Solved: - Efficient signal development circuitry layout in memory devices - Optimization of transistor placement for signal development
Benefits: - Improved performance of memory devices - Enhanced signal development capabilities - Streamlined manufacturing processes
Commercial Applications: Title: "Advanced Signal Development Circuitry Layouts for Memory Devices" This technology can be used in the production of memory devices, leading to faster and more reliable data storage solutions. The market implications include increased demand for high-performance memory products in various industries such as consumer electronics, automotive, and data centers.
Questions about Signal Development Circuitry Layouts for Memory Devices: 1. How does the positioning of transistors in multiple levels of a memory die impact signal development efficiency? 2. What are the potential challenges in implementing signal development circuitry layouts in memory devices?
Original Abstract Submitted
methods, systems, and devices for signal development circuitry layouts in a memory device are described. a memory device may include signal development circuitry that is positioned in multiple levels of a memory die relative to a substrate. for example, a set of first transistors used for developing access signals may be located on a first level of a memory die, and a set of second transistors used for developing the access signals may be located on a second level of the memory die. formation of the set of first transistors and the set of second transistors may involve processing operations that are common with the formation of other transistors on a respective level, such as cell selection transistors, deck selection transistors, shunting transistors, and other transistors of the respective level.
