Micron technology, inc. (20240221804). DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE simplified abstract

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DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE

Organization Name

micron technology, inc.

Inventor(s)

Yue Wang of Beijing City (CN)

Jingcheng Yuan of Tokyo (JP)

DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240221804 titled 'DYNAMIC PROGRAMMING TIME FOR A MEMORY DEVICE

The abstract of the patent application describes a memory device that receives a write command to program data, determining a programming time from two possible options. The device then programs the data to its memory using the selected programming time.

  • Memory device receives a write command to program data
  • Determines programming time from two options
  • Programming time indicates the amount of time for programming
  • First programming time associated with a first amount of time
  • Second programming time associated with a second amount of time
  • Data is programmed to memory using the selected programming time

Potential Applications: - Embedded systems - Solid-state drives - Consumer electronics

Problems Solved: - Efficient programming of data in memory devices - Optimal use of programming time

Benefits: - Faster data programming - Improved memory device performance

Commercial Applications: Title: "Optimized Data Programming Technology for Memory Devices" This technology can be used in various commercial applications such as: - Manufacturing of memory devices - Data storage solutions - Electronic devices production

Questions about the technology: 1. How does the memory device determine the programming time for data? 2. What are the potential implications of using the selected programming time for memory programming?

Frequently Updated Research: Stay updated on the latest advancements in memory programming technology to enhance data storage efficiency and performance.


Original Abstract Submitted

in some implementations, a memory device may receive a write command indicating data to be programmed. the memory device may determine a programming time, from a first programming time and a second programming time, to be used to program the data, wherein the programming time indicates an amount of time to be associated with programming the data, and wherein the first programming time is associated with a first amount of time and the second programming time is associated with a second amount of time. the memory device may program the data to a memory of the memory device using the programming time.