Micron technology, inc. (20240221798). TECHNIQUES FOR INDICATING ROW ACTIVATION simplified abstract
Contents
- 1 TECHNIQUES FOR INDICATING ROW ACTIVATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TECHNIQUES FOR INDICATING ROW ACTIVATION - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Memory Row Activation
- 1.11 Original Abstract Submitted
TECHNIQUES FOR INDICATING ROW ACTIVATION
Organization Name
Inventor(s)
Graziano Mirichigni of Vimercate (IT)
Efrem Bolandrina of Fiorano al Serio (IT)
TECHNIQUES FOR INDICATING ROW ACTIVATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240221798 titled 'TECHNIQUES FOR INDICATING ROW ACTIVATION
The abstract describes methods, systems, and devices for indicating row activation in memory devices. An indication associated with an activation command allows the memory device to start some activation operations before receiving the full command. The indication may include the location of the next row to access, and it can be part of a previous activation or precharge command. The memory device can begin activation operations for the next row before completing the precharge operation of the current row. It then receives the activation command for the next row and completes the activation operations accordingly.
- Memory devices can start activation operations before receiving the full activation command.
- Indications associated with activation commands enable pre-emptive activation operations.
- The indication may include the location of the next row to access.
- Activation operations for the next row can begin before the current row's precharge operation is complete.
- The memory device completes activation operations upon receiving the full activation command.
Potential Applications
This technology can be applied in various memory systems, such as DRAM, to optimize row activation processes and improve memory access efficiency.
Problems Solved
This innovation addresses the delay in row activation by allowing memory devices to start activation operations in advance, enhancing overall memory performance.
Benefits
- Improved memory access speed - Enhanced memory efficiency - Optimized row activation processes
Commercial Applications
Title: Advanced Memory Systems for Enhanced Performance This technology can be utilized in data centers, servers, and other computing systems where memory performance is crucial. It can lead to faster data processing and improved system responsiveness.
Prior Art
To explore prior art related to this technology, researchers can look into patents and publications in the field of memory devices, particularly focusing on row activation techniques and optimizations.
Frequently Updated Research
Researchers are constantly working on enhancing memory systems' performance and efficiency. Stay updated on the latest advancements in memory technology to leverage the benefits of improved memory access operations.
Questions about Memory Row Activation
How does pre-emptive row activation benefit memory devices?
Pre-emptive row activation allows memory devices to optimize their operations by starting activation processes in advance, leading to improved memory access speed and efficiency.
What are the key challenges in implementing pre-emptive row activation in memory systems?
Implementing pre-emptive row activation requires precise timing and coordination to ensure seamless transition between rows and commands. It also involves addressing potential conflicts between pre-emptive and regular activation operations.
Original Abstract Submitted
methods, systems, and devices for techniques for indicating row activation are described. a memory device may receive an indication associated with an activation command, which may enable the memory device to begin some aspects of an activation operation before receiving the associated activation command. the indication may include a location of a next row to access as part of the activation command. the indication may be included in a previous activation command or in a precharge command. the memory device may begin activation operations for the next row before the precharge operation of the current row is complete. the memory device may receive the activation command for the next row after receiving the indication, and may complete the activation operations upon receiving the activation command.
