Micron technology, inc. (20240206175). Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract
Contents
Memory Circuitry And Method Used In Forming Memory Circuitry
Organization Name
Inventor(s)
Sidhartha Gupta of Boise ID (US)
Adam W. Saxler of Boise ID (US)
John D. Hopkins of Meridian ID (US)
Memory Circuitry And Method Used In Forming Memory Circuitry - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206175 titled 'Memory Circuitry And Method Used In Forming Memory Circuitry
The method described in the abstract involves forming memory circuitry by creating a stack with alternating tiers of sacrificial and non-sacrificial materials, along with conductive material and channel-material strings.
- The stack consists of vertically-alternating first tiers (sacrificial material) and second tiers (non-sacrificial material) above a conductor tier.
- Horizontally-elongated trenches are formed through the first and second tiers, with channel-material strings extending through memory-block regions.
- The sacrificial material is replaced with conductive material to create control-gate lines in the memory-block regions.
- Conducting material is then formed in the lowest first tier to electrically couple the channel material and conductor material.
Potential Applications: - Memory circuitry in electronic devices - Semiconductor manufacturing - Data storage technology
Problems Solved: - Efficient formation of memory circuitry - Improved conductivity and data storage capabilities - Enhanced performance of electronic devices
Benefits: - Increased memory capacity - Faster data processing speeds - Enhanced reliability and durability of memory circuitry
Commercial Applications: Title: Advanced Memory Circuitry Technology for Electronic Devices This technology can be utilized in the production of smartphones, computers, and other electronic devices to enhance memory capacity and performance, leading to improved user experience and market competitiveness.
Questions about the Technology: 1. How does the alternating tier structure improve the efficiency of memory circuitry formation? 2. What are the specific benefits of using sacrificial and non-sacrificial materials in memory circuitry?
Original Abstract Submitted
a method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers directly above a conductor tier. the first tiers comprise sacrificial material and the second tiers comprise non-sacrificial material that is of different composition from that of the sacrificial material. the stack comprises horizontally-elongated trenches extending through the first tiers and the second tiers and are individually between immediately-laterally-adjacent memory-block regions. channel-material strings are formed that extend through the first and second tiers in the memory-block regions. through the horizontally-elongated trenches, the sacrificial material is replaced with conductive material that comprises control-gate lines in the memory-block regions. after the replacing, conducting material is formed in a lowest of the first tiers and directly electrically couples together the channel material of the channel-material strings and conductor material of the conductor tier. other embodiments, including structure, are disclosed.
