Micron technology, inc. (20240206152). HYBRID GATE DIELECTRIC ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY simplified abstract
Contents
HYBRID GATE DIELECTRIC ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY
Organization Name
Inventor(s)
Kamal M. Karda of Boise ID (US)
Scott E. Sills of Boise ID (US)
HYBRID GATE DIELECTRIC ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206152 titled 'HYBRID GATE DIELECTRIC ACCESS DEVICE FOR VERTICAL THREE-DIMENSIONAL MEMORY
The patent application describes a hybrid gate dielectric access device for vertical three-dimensional memory.
- The memory cell includes a horizontally oriented access device with source/drain regions separated by a channel region.
- The access device is controlled by a gate, and a hybrid gate dielectric separates the gate from the channel region.
- A horizontally oriented storage node is coupled to the second source/drain region of the access device.
Potential Applications: - This technology can be used in the development of high-density vertical three-dimensional memory systems. - It may find applications in data storage devices, solid-state drives, and other memory-intensive applications.
Problems Solved: - Addresses the need for efficient and compact memory cell designs in vertical three-dimensional memory systems. - Improves the performance and reliability of memory devices by utilizing a hybrid gate dielectric.
Benefits: - Increased memory density and storage capacity. - Enhanced performance and reliability of memory systems. - Potential for cost-effective production and scalability.
Commercial Applications: Title: "Hybrid Gate Dielectric Access Device for Vertical 3D Memory: Commercial Applications and Market Implications" This technology has the potential to revolutionize the memory storage industry by enabling the development of high-density and high-performance memory solutions. It can cater to a wide range of commercial applications, including data centers, consumer electronics, and IoT devices.
Questions about the technology: 1. How does the hybrid gate dielectric improve the performance of vertical three-dimensional memory? 2. What are the key advantages of using a horizontally oriented storage node in this memory cell design?
Original Abstract Submitted
systems, methods and apparatus are provided for a hybrid gate dielectric access device for vertical three-dimensional (3d) memory. the memory cell has a first horizontally oriented access device having a first source/drain region and a second source/drain region separated by a first channel region. the first access device is operatively controlled by a first gate. a hybrid gate dielectric separates the gate from the channel region and a horizontally oriented storage node coupled to the second source/drain region of the access device.
