Micron technology, inc. (20240203513). PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE simplified abstract
Contents
PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203513 titled 'PASS VOLTAGE ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
The abstract describes a patent application for adjusting pass voltages in memory devices to account for non-programmable memory cells in a set of vertically stacked memory cells.
- Determining a pass voltage adjustment value based on the number of program erase cycles associated with the memory device.
- Adjusting the default pass voltage by the pass voltage adjustment value to generate an adjusted pass voltage.
- Performing a program operation on the set of vertically stacked memory cells using the adjusted pass voltage.
Potential Applications: - Memory devices in electronic devices - Data storage systems - Semiconductor manufacturing
Problems Solved: - Ensuring accurate programming of memory cells - Improving overall memory device performance - Addressing issues with non-programmable memory cells
Benefits: - Enhanced memory device reliability - Increased efficiency in data storage - Improved longevity of memory devices
Commercial Applications: Title: "Enhanced Memory Device Programming Technology" This technology could be utilized in various industries such as consumer electronics, data centers, and automotive systems. It can improve the performance and reliability of memory devices, leading to better overall product quality and customer satisfaction.
Prior Art: Researchers can explore prior patents related to memory device programming techniques, pass voltage adjustments, and memory cell programming strategies to gain a deeper understanding of the existing technology landscape.
Frequently Updated Research: Researchers and developers in the semiconductor industry may be conducting ongoing studies on memory device programming methods, pass voltage optimization, and memory cell reliability to enhance memory device performance and longevity.
Questions about Memory Device Programming Technology: 1. How does adjusting pass voltages improve memory device performance? Adjusting pass voltages based on the number of program erase cycles can help compensate for non-programmable memory cells, ensuring accurate programming and enhancing overall device reliability.
2. What are the potential implications of this technology for the semiconductor industry? This technology could lead to advancements in memory device manufacturing processes, resulting in more efficient and reliable memory products for various applications.
Original Abstract Submitted
a request to perform a program operation on a set of vertically stacked memory cells of a memory device is received. a pass voltage adjustment value based on a number of program erase cycles (pecs) associated with the memory device is determined responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable. a default pass voltage is adjusted by the pass voltage adjustment value to generate an adjusted pass voltage. the program operation on the set of vertically stacked memory cells is performed using the adjusted pass voltage.
