Micron technology, inc. (20240203504). SENSING TIME ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE simplified abstract
Contents
- 1 SENSING TIME ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SENSING TIME ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Memory Device Programming Techniques
- 1.13 Original Abstract Submitted
SENSING TIME ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
SENSING TIME ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203504 titled 'SENSING TIME ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Simplified Explanation
The patent application describes a method to adjust sensing time during a program operation on a set of memory cells in a memory device, based on the number of program erase cycles associated with the device.
- Adjusts sensing time based on the number of program erase cycles to account for non-programmable memory cells.
- Enhances program operation by using the adjusted sensing time.
Key Features and Innovation
- Determining sensing time adjustment value based on program erase cycles.
- Adjusting default sensing time to improve program operation efficiency.
Potential Applications
This technology can be applied in various memory devices such as flash memory, SSDs, and other non-volatile memory systems.
Problems Solved
- Addressing inefficiencies in program operations caused by non-programmable memory cells.
- Improving overall performance and reliability of memory devices.
Benefits
- Enhanced program operation efficiency.
- Increased reliability of memory devices.
- Improved overall performance.
Commercial Applications
Memory Devices
This technology can be utilized in the development of more efficient and reliable memory devices, enhancing their performance in various applications such as data storage, consumer electronics, and automotive systems.
Prior Art
Further research can be conducted in the field of memory device programming techniques and sensing time adjustments to explore existing technologies and innovations.
Frequently Updated Research
Stay updated on advancements in memory device programming techniques and sensing time adjustments to ensure the latest developments are incorporated into this technology.
Questions about Memory Device Programming Techniques
How does adjusting sensing time based on program erase cycles improve memory device performance?
Adjusting sensing time based on program erase cycles helps optimize program operations by accounting for non-programmable memory cells, leading to enhanced efficiency and reliability in memory devices.
What are the potential implications of this technology in the development of future memory devices?
This technology has the potential to revolutionize memory device programming techniques, leading to more efficient and reliable memory systems for various applications.
Original Abstract Submitted
a request to perform a program operation on a set of vertically stacked memory cells of a memory device is received. a sensing time adjustment value based on a number of program erase cycles (pecs) associated with the memory device is determined responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable. a default sensing time is adjusted by the sensing time adjustment value to generate an adjusted sensing time. the program operation on the set of vertically stacked memory cells is performed using the adjusted sensing time.
