Micron technology, inc. (20240203503). PROGRAM VERIFY LEVEL ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE simplified abstract
Contents
PROGRAM VERIFY LEVEL ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Christina Papagianni of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
PROGRAM VERIFY LEVEL ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203503 titled 'PROGRAM VERIFY LEVEL ADJUSTMENT FOR PROGRAM OPERATION IN A MEMORY DEVICE
Simplified Explanation: The patent application describes a method to adjust the program verify level for memory cells in a memory device based on the number of program erase cycles and the presence of non-programmable memory cells in a set of vertically stacked memory cells.
- Program verify level adjustment value determined based on the number of program erase cycles associated with the memory device.
- Default program verify level adjusted by the adjustment value to generate an adjusted program verify level.
- Program operation on the set of memory cells performed using the adjusted program verify level.
Key Features and Innovation:
- Adaptive adjustment of program verify level based on memory cell characteristics.
- Enhanced reliability and efficiency in memory operations.
- Optimization of program verify level for improved performance.
Potential Applications:
- Semiconductor memory devices.
- Flash memory technology.
- Embedded systems.
Problems Solved:
- Addressing non-programmable memory cells in memory devices.
- Improving program verify level accuracy.
- Enhancing overall memory device performance.
Benefits:
- Increased reliability in memory operations.
- Enhanced efficiency in memory programming.
- Improved longevity of memory devices.
Commercial Applications:
- Memory device manufacturing industry.
- Consumer electronics sector.
- Data storage solutions market.
Prior Art: Prior art related to this technology may include research on memory cell programming techniques, program verify level adjustments, and memory device reliability enhancements.
Frequently Updated Research: Ongoing research in memory device technology, semiconductor manufacturing processes, and memory cell programming methods may be relevant to this technology.
Questions about Memory Cell Programming: 1. How does adjusting the program verify level impact memory device performance? 2. What are the potential challenges in implementing adaptive program verify level adjustments in memory devices?
Original Abstract Submitted
a request to perform a program operation on a set of vertically stacked memory cells of a memory device is received. a program verify level adjustment value based on a number of program erase cycles (pecs) associated with the memory device is determined responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable. a default program verify level is adjusted by the program verify level adjustment value to generate an adjusted program verify level. the program operation on the set of vertically stacked memory cells is performed using the adjusted program verify level.
